抄録
β-SiC films were prepared by laser chemical vapor deposition (LCVD) using a diode laser with hexamethyldisilane (C6H18Si2) precursors. The effects of laser power (PL), deposition temperature (Tdep) and total pressure (Ptot) on deposition rate (Rdep) and microstructure were investigated. Films showed highly (111)-orientation and had Rdep in range of 36-84 μm h-1. At PL = 200 W, Ptot = 400 Pa and Tdep = 1900 K, the surface of film was consisted of well crystalline polygonal grains about 2 μm in size and the cross section showed a dense columnar structure. With increasing Ptot from 600 to 1000 Pa, the grains in films changed into smaller size and irregular.