日本セラミックス協会 年会・秋季シンポジウム 講演予稿集
2012年年会講演予稿集
セッションID: 1G20
会議情報
High-speed deposition of (111)-oriented beta-SiC films by laser CVD
*章 嵩塗 溶後藤 孝
著者情報
キーワード: beta-SiC film, laser CVD, high speed
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β-SiC films were prepared by laser chemical vapor deposition (LCVD) using a diode laser with hexamethyldisilane (C6H18Si2) precursors. The effects of laser power (PL), deposition temperature (Tdep) and total pressure (Ptot) on deposition rate (Rdep) and microstructure were investigated. Films showed highly (111)-orientation and had Rdep in range of 36-84 μm h-1. At PL = 200 W, Ptot = 400 Pa and Tdep = 1900 K, the surface of film was consisted of well crystalline polygonal grains about 2 μm in size and the cross section showed a dense columnar structure. With increasing Ptot from 600 to 1000 Pa, the grains in films changed into smaller size and irregular.
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©  日本セラミックス協会 2012
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