High-speed deposition of (111)-oriented beta-SiC films by laser CVD

抄録

β-SiC films were prepared by laser chemical vapor deposition (LCVD) using a diode laser with hexamethyldisilane (C₆H₁₈Si₂) precursors. The effects of laser power (P_L), deposition temperature (T_dep) and total pressure (P_tot) on deposition rate (R_dep) and microstructure were investigated. Films showed highly (111)-orientation and had Rdep in range of 36-84 μm h^-1. At P_L = 200 W, P_tot = 400 Pa and T_dep = 1900 K, the surface of film was consisted of well crystalline polygonal grains about 2 μm in size and the cross section showed a dense columnar structure. With increasing Ptot from 600 to 1000 Pa, the grains in films changed into smaller size and irregular.