日本セラミックス協会 年会・秋季シンポジウム 講演予稿集
Annual Meeting of The Ceramic Society of Japan, 2012
セッションID: 1G21
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Effect of precursor vaporization temperature on microstructure of TiO2 films
*Ming GaoAkihiko ItoRong TuTakashi Goto
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TiO2 films were prepared by laser chemical vapor deposition using Nd: YAG laser. Effect of precursor vaporization temperature (Tvap) and deposition temperature (Tdep) on microstructure and deposition rate was investigated. Single-phase anatase TiO2 films were obtained at Tvap = 453 K and Tdep = 1010-1080 K, whereas single-phase rutile TiO2 films were obtained at Tdep = 750-1180 K. TiO2 films showed a columnar growth and the diameter of columnar increasing with increasing Tvap from 453 to 623K. Morphology of TiO2 films changed from granular grains to polygonal grains, and then to terraced grains with increasing Tdep. At Tdep = 1000-1100 K, the deposition rate (Rdep) increased significantly from 25 to 980 um/h with increasing Tvap from 453 to 623 K. The highest deposition rate for TiO2 film reached 980 um/h at Tvap = 623 K and Tdep = 1068 K.
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© The Ceramic Society of Japan 2012
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