抄録
Our approach towards a second generation radiation sensitive developable bottom antireflective coating (DBARC's) for 193 nm and its use with different implant resist resin types will be discussed. Ion beam implant resistance (As implantation 15 KeV at 5X1015 dose with 20X10-4 amp) and imaging results (1:1 L/S features down to 140 nm) will be shown comparing implant resist materials based upon a fluorinated resins or alicyclic/acrylate resins. Surprisingly, we found that the non-fluorinated materials gave better implant resistance (∼2-3 X1011 atoms/cm2) despite the higher atomic number of fluorine compared to hydrogen in the fluorinated implant materials (∼2-5X1012 atoms/cm2). Finally, an update on the current lithographic performance of the acrylate/alicylic implant resist on second generation DBARC will be discussed.
