Abstract
EUV lithography has been desired as the leading technology for single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off is the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) & Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon: SOC). In this paper, we especially propose new approaches to achieve high resolution around hp10nm. The key points of our concepts are 1) control PR profiles, 2) new solvent system to avoid chemical mixture, 3) high etching selective DDR materials and 4) high planar DDR materials. This new DDRM technology can be the promising approach for hp10nm level patterning in N7/N5 and beyond.
