抄録
The directed self-assembly (DSA) of block copolymers has attracted a great deal of interest due to its potential applications in sub-10 nm lithography. The conventional organic-organic DSA materials such as poly[styrene-block-(methyl methacrylate)] (PS-b-PMMA) have been extensively studied, however, the low etch contrast between two blocks and the difficulty to reduce L0 (ca. 28 nm) limit its application. In this study, we designed and synthesized the novel DSA materials based on PS-b-PMMA. Through the modifying of acrylics part, segment-segment interaction parameter (χ) can be significantly increased, which leads to rapid self-assembly and high etch contrast. These block copolymers show the potential as DSA material with high intrinsic resolution for sub-10 nm and beyond nodes.
