Challenges and Progress in Defectivity for Advanced ArF Lithography Process

抄録

The contentious issue in ArF lithography is to reduce cost with malti-patterning process. To achieve low defectivity is required at high speed scanner for increasing throughput. Especially, demand of applying top-coat (TC) less process is being increasing recent year at using high speed scanner. The target for defect counts is becoming severe regarding especially logic device. For positive-tone development (PTD) by using alkaline developer, the polarity-change property function of film surface from hydrophobic to hydrophilic after alkaline development process is key to reduce defectivity. The copolymer which has high hydrolysis rate for no swelling design shows also good potential to defect reduction. In addition, it is important to control the uniformization of each material distribution in resist matrix. Especially, aggregation of photo acid generator (PAG) is one of reasons why defect is occurred. Suppressing PAG aggregation is very impotent factor to improve defectivity.