Patterning of 100nm Features Using X-ray Lithography

Azalia A. Krasnoperova; Scott Hector; Andrew Pomerene; Angela Lamberti; Shalom Wind; Raman Viswanathan; Hiroshi Ito

doi:10.2494/photopolymer.10.613

Azalia A. Krasnoperova, Scott Hector, Andrew Pomerene, Angela Lamberti, Shalom Wind, Raman Viswanathan, Hiroshi Ito

著者情報

キーワード: X-ray Lithography, chemically amplified resists, nanolithography

ジャーナルフリー

1997 年 10 巻 4 号 p. 613-618

DOI https://doi.org/10.2494/photopolymer.10.613

詳細

抄録

Patterning of 100nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E. UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed.

責任著者(Corresponding author)

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