Nanolithography Using Fullerene Films as an Electron Beam Resist

抄録

Nanometer scale patterns have been fabricated using evaporated films of C₆₀ and its derivative, C₆₀₍CH₂)₂(C₁₀H₆), as negative type electron beam (e-be am) resists. E-beam irradiation reduces the dissolution rate of the films in organic solvents such as monochlorobenzene. In addition, the rate of thermal sublimation in vacuum is also reduced by the exposure. These molecules have quite similar resist properties. They exhibits good resolution and high dry-etch durability. The performance of the resists was demonstrated by defining about 20nm dot patterns in the resist films and fabricating Si nanopillars, about 20nm in diameter and 100nm high, by subsequent plasma etching. The results of optical measurements suggest that the exposure mechanism of C₆₀ resist may be due to destruction of the molecules by e-beam irradiation.