C60-Incorporated Nanocomposite Resist System
1997 年 10 巻 4 号 p. 651-656
詳細
1997 年 10 巻 4 号 p. 651-656
We have recently proposed a nanocomposite resist system that incorporates sub-nm size fullerene C60 molecules into a conventional resist material. This new resist system leads to a substantial improvement of the various aspects of resist performance necessary for nanometer pattern fabrication with no significant process change. Fullerene (C60) is found to be an excellent material for incorporation in view of its molecular size, etching resistance, and composite preparation capability. This paper describes the basic characteristics of nanocomposite resist systems of C60 and two conventional electron-beam positive resists, polymethyl methacrylate (PMMA) and a highly etching durable resist, ZEP520. Further, improvement of the environmental stability of a C60-incorporated chemically amplified negative resist, SAL601, and a positive one, SEPR-44-D, is also discussed.
