抄録
X-ray and elctron beam lithography is expected to be leading candidates for the future VLSI's having a minimum dimension below the resolution limit of optical lithography. Since the concept of chemical amplification has been introduced, tremendous progress has been achieved in designing resists for deep-UV, x-ray and electron beam lithography. Recently three component resist systems which contain polymer matrix, photoacid generator and dissolution inhibitor have shown the enhanced sensitivity and excellent resolution. Novel novolak based positive resist containing three components has been developed. The properties of novolak resins with solvent treatment was characterized by GPC, TGA and DSC. The results suggest that the solvent extraction influences the thermal stability and molecular weight of novolak resins. Preliminary synchrotron x-ray lithography shows that KXPR resist containing 0.3 wt% PAG is capable of ca. 0.4μm resolution and 60mJ/cm2 sensitivity . The KXPR resist is also sensitive to electon beam exposure. The resist containing 0.7 wt% PAG has a high sensitivity of ca. 3μC/cm2 with γ 5.1, and is capable of 0.3μm resolution. Etch resistance was evaluated and reported on silicon dioxide and polysilicon layers.
