抄録
A new fabrication technique for fine circular (or ring-shaped) patterns is proposed. This technique uses the fragile corner region of a mask material covering over a dot pattern to make a circular window mask and transfer the circular mask pattern to the underlying layer. The technique can drastically improve the ring-width resolution of circular patterns by canceling resolution-limiting effects such as diffraction in photolithography or scattering in electron beam lithography. The time needed for pattern data processing can also be reduced by writing simple dot patterns. Patterning experiments in electron beam lithography demonstrate the fabrication of circular patterns with sub-quartermicron dimensions. Integrated fine circular patterns with a dimension of a quarter- micron or less will further contribute to fabrication of micro-or nanostructure devices.
