Plasma Polymerization Technology for Future Lithography

抄録

The kinetic and mechanism of the plasma chemical conversions of methylmethacrylate (MMA) in RF discharge in the conditions leading to the e-beam resist film formation were studied by GC-IR technique (chromatographic detection using FT-IR spectrometer), mass-spectrometry and visible range spectroscopy. A kinetic scheme with 96 reactions was optimized to describe experimentally observed kinetic for the buildup of 20 main gaseous products of MMA conversion in the wide range of discharge parameters. A new method for improving resist plasma etching durability by means of plasma chemical modification has been developed. It was shown that organic films formed under the special conditions in RF discharge in the mixture of argon and MMA while submitted to RF plasma in RIE mode were found to have 8-10 times greater durability than that for PMMA containing resists.