1996 年 9 巻 4 号 p. 663-675
The deep-UV positive acting chemically amplified resists referred to as CAMP6 and ARCH were evaluated for use in direct write and projection electron-beam lithography technologies. In the evaluation we compared the lithographic characteristics of each resist under electron-beam exposure using primarily a JEOL JBX-5DII system operating at 50KeV and a Scattering with Angular Limitation Projection Electron-Beam Lithography (SCALPEL) tool operating at 100KeV. Both resists exhibited contrast values >5 and resolution well below 0.20μm. CAMP6 was however plagued with excessive film loss after the process post-exposure bake step and required a protective coating on the film to improve process latitude. A series of ARCH formulations were observed to eliminate any film loss caused by either heating during exposure or the high vacuum environment of the exposure tool. When exposed on the direct write tool, 0.09μm wide features at a dose of 11μC/cm2 were delineated. Sub-0.25μm images were obtai ed using the projection system at a dose of 19 μC/cm2.
