抄録
SiC single crystal is an innovative material for producing next-generation power electronics because of its high dielectric strength and heat resistance. EDM cutting method is being developed as an alternative method for slicing SiC wafers in the future. Generally multi-wire EDM method is being studied to cut SiC ingots. But the problem is wire vibration and breakage which will cause bad cutting accuracy and low cutting speed. In this study, aiming to improve the cutting speed and reduce the kerf loss, foil EDM slicing method which utilizes a band foil electrode and applies a relative motion between the foil tool and the workpiece is proposed and the feasibility of this new method is discussed. The tool wear ratio, area cutting speed, kerf loss and surface integrity are experimentally investigated.
