Bottom Contact Ambipolar SWNT-FET Devices Using Flattened Electrodes

Abstract

We have fabricated bottom contact CNT-FET devices on flattened electrodes. Our devices had larger numbers of CNT direct junctions compared to non-flattened devices due to stronger interaction between CNTs and modified SiO₂ surfaces. Although all of our flattened and non-flattened devices showed ambipolar characteristic, flattened electrodes devices had better symmetry of transfer characteristic.