Effect of Nickel(II) ion on Copper Electrodeposition from Ethylenediamine Complex Bath

抄録

In the present paper, we describe direct copper electrodeposition on high resistivity substrates such as TiN and ITO from ethylenediamine complex bath. The copper electrodeposition was carried out at 1 A/dm² and 50 °C. Smooth surface was obtained by adding thiodiglycolic acid. Good adhesion of deposited copper film on TiN was achieved from tape peeling test. Internal stress of deposited copper film from ethylenediamine complex bath was decreased by adding 5 mg/L NiSO₄·6H₂O in the bath. This bath could be used for the formation of copper wiring on high resistivity substrates as an alternative to conventional acidic copper sulfate bath.