抄録
TiN films were prepared on a polycarbonate substrate by the arc ion plating method. Two types of bias generators (d c and r f.) were used to apply voltage to the substrate. The optimum N2 gas pressure was very low (2×10-3 Torr) and the optimum d c bias voltage was -400V, when a d c bias generator was used. But many cracks were observed in the films.
We were able to prepare a non-cracked, lustrous, gold-color TiN film when an r f self bias voltage of -100V was applied and Ti was undercoated on the substrate before deposition of TiN film.
