主催: 公益社団法人 応用物理学会 多元系化合物・太陽電池研究会
会議名: 平成28年度 応用物理学会「多元系化合物・太陽電池研究会」年末講演会
開催地: 12月9日（金）：国立研究開発法人産業技術総合研究所 福島再生可能エネルギー研究所/12月10日（土）：ふくしま磐梯熱海温泉 ホテル華の湯
開催日: 2016/12/09 - 2016/12/10
p. 51-54
SnS thin films have been prepared by vacuum deposition and sulfurization process. Atomic content of SnS films was almost stoichiometry by sulfurization at 300℃ for 60 min. Also, ZnO:Al thin film have been prepared by vacuum deposition and annealing in Air. Then, high transmittance and low electrical resistivity was obtained after annealing in air at 260℃ for 45 min. We fabricated n-ZnO:Al/p-SnS on FTO/SLG substrate by these methods and measured electrical property diode made. As a result, diode characteristic was obtained with a threshold voltage of 0.5 V.
