主催: 公益社団法人 応用物理学会 多元系化合物・太陽電池研究会
会議名: 平成28年度 応用物理学会「多元系化合物・太陽電池研究会」年末講演会
開催地: 12月9日（金）：国立研究開発法人産業技術総合研究所 福島再生可能エネルギー研究所/12月10日（土）：ふくしま磐梯熱海温泉 ホテル華の湯
開催日: 2016/12/09 - 2016/12/10
p. 47-50
The SnS films were deposited on soda-lime glass substrate by sol-gel method. We have also confirmed that the thin films have a SnS structure after annealing in N2 at 300℃. From the results of XPS measurements, it is found that Sn state is Sn2+ and Sn4+ in the films. In addition, XPS data show desorption of S atoms from the surface during annealing in vacuum. We have obtained the bandgap energy of 1.2 eV for the films annealed in N2 and air atmosphere.
