Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes

Abstract

We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (V_th) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.