IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Distinguished Papers in Photonics
A Novel Method to Measure Absolute Internal Quantum Efficiency in III-Nitride Semiconductors by Simultaneous Photo-Acoustic and Photoluminescence Spectroscopy
Atsushi A. YAMAGUCHIKohei KAWAKAMINaoto SHIMIZUYuchi TAKAHASHIGenki KOBAYASHITakashi NAKANOShigeta SAKAIYuya KANITANIShigetaka TOMIYA
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2018 Volume E101.C Issue 7 Pages 527-531

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Abstract

Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect density, and the assumption is not necessarily valid. In 2016, we proposed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. In this study, we have applied the method to InGaN quantum-well active layers and have estimated the IQE values and their excitation carrier-density dependence in the layers.

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© 2018 The Institute of Electronics, Information and Communication Engineers
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