A frequently occurring subcircuit consists of a loop of a resistor (R), a field-effect transistor (FET), and a capacitor (C). The FET acts as a switch, controlled at its gate terminal by a clock voltage. This subcircuit may be acting as a sample-and-hold (S/H), as a passive mixer (P-M), or as a bandpass filter or bandpass impedance. In this work, we will present a useful analysis that leads to a simple signal flow graph (SFG), which captures the FET-R-C circuit's action completely across a wide range of design parameters. The SFG dissects the circuit into three filtering functions and ideal sampling. This greatly simplifies analysis of frequency response, noise, input impedance, and conversion gain, and leads to guidelines for optimum design. This paper focuses on the analysis of a single-path FET-R-C circuit's signal transfer characteristics including the reconstruction of the complete waveform from the discrete-time sampled voltage.

This paper reviews architectures and topologies for column-parallel analog-to-digital converters (ADCs) used for CMOS image sensors (CISs) and discusses the performance of CISs using column-parallel ADCs based on figures-of-merit (FoM) with considering noise models which behave differently at low/middle and high pixel-rate regions. Various FoM considering different performance factors are defined. The defined FoM are applied to surveyed data on reported CISs using column-parallel ADCs which are categorized into 4 types; single slope, SAR, cyclic and delta-sigma ADCs. The FoM defined by (noise)²(power)/(pixel-rate) separately for low/middle and high pixel-rate regions well explains the frontline of the CIS' performance in all the pixel rates. Using the FoM defined by (noise)²(power)/(intrascene dynamic range)(pixel-rate), the effectiveness of recently-reported techniques for extended-dynamic-range CISs is clarified.

This paper presents a 1024-QAM OFDM signal capable WLAN receiver in 65nm CMOS technology. Thermal noise-based IQ frequency-independent mismatch correction and IQ frequency-dependent mismatch correction with baseband loopback are proposed for the self-calibration in the receiver. The measured image rejection ratio of the self-calibration is -56.3dB. The receiver achieves the extremely low EVM of -37.1dB even with wide channel bandwidth of 80MHz and has the ability to receive the 1024-QAM signal. The result indicates that the receiver is extendable for the 802.11ax compliant receiver that supports a higher density modulation scheme of MIMO.

This paper presents low-noise amplifier (LNA)-less 300-GHz CMOS receivers that operate above the NMOS unity-power-gain frequency, f_max. The receivers consist of a down-conversion mixer with a doubler- or tripler-last multiplier chain that upconverts an LO^1/n signal into 300 GHz. The conversion gain of the receiver with the doubler-last multiplier is -19.5 dB and its noise figure, 3-dB bandwidth, and power consumption are 27 dB, 27 GHz, and 0.65 W, respectively. The conversion gain of the receiver with the tripler-last multiplier is -18 dB and its noise figure, 3-dB bandwidth, and power consumption are 25.5 dB, 33 GHz, and 0.41 W, respectively. The receivers achieve a wireless data rate of 32 Gb/s with 16QAM. This shows the potential of the moderate-f_max CMOS technology for ultrahigh-speed THz wireless communications.

This paper proposes Code-Modulated Synchronized (CMS) -OOK modulation scheme for normally-off wireless sensor networks, and demonstrates the operation of the transmitter for the CMS-OOK using 65nm SOTB (Silicon-On Thin Buried Oxide) CMOS technology. Based on investigating RF characteristics of SOTB CMOS, analog part of a CMS-OOK transmitter was designed, fabricated and evaluated in combination with based-FPGA digital part. With code modulation and controlling the carrier frequency by body bias of the SOTB devices, the spectrum of a CMS-OOK transmitter output is widen to achieve -62dBm/MHz peak power spectrum density at 15 MHz bandwidth. Chip of analog part on-board is supplied by 1V for power amplifier and 0.75V for the rest. It consumes average 83µW according to 83nJ/bit at 1kbps data transmission.

This paper presents a 3rd-order ΔΣAD modulator with noise coupling structure using the proposed passive adder embedded quantization noise shaping (QNS) SAR quantizer. QNS SAR quantizer can feedback shaped quantization noise and realize an additional 1st-order noise shaping by noise coupling technique. As a result, the 3rd-order noise coupled ΔΣAD modulator is realized by two integrators with ring amplifier and the QNS SAR quantizer. The SPICE simulation results demonstrate the feasibility of the proposed ΔΣAD modulator in 90nm CMOS technology. Simulated SNDR of 81.05dB is achieved while a sinusoid -4.32dBFS input is sampled at 100MS/s and the bandwidth is BW=3.125MHz. The total power consumption in the modulator is 4.58mW while the supply voltage is 1.2V.

This paper describes a top-down design methodology to optimize resonant capacitance in a wireless power transfer system with 3-D stacked two receivers. A 1:2 selective wireless power transfer is realized by a frequency/time division multiplexing scheme. The power transfer function is analytically formulated and the optimum tuning capacitance is derived, which is validated by comparing with system simulation results. By using the optimized values, power transfer efficiencies at 6.78MHz and 13.56MHz are simulated to be 80% and 84%, respectively, which are <3% worse than a conventional wireless power transfer system.

A plasmonic black pole (PBP) consisting of a series of touching spherical metal surfaces is analyzed using the finite-difference time-domain (FDTD) method with the periodic boundary condition. First, the wavelength characteristics of the PBP are studied under the assumption that the PBP is omnidirectionally illuminated. It is found that partial truncation of each metal sphere reduces the reflectivity over a wide wavelength range. Next, we consider the case where the PBP is illuminated with a cylindrical wave from a specific direction. It is shown that an absorptivity of more than 80% is obtained over a wavelength range of λ=500 nm to 1000 nm. Calculation regarding the Poynting vector distribution also shows that the incident wave is bent and absorbed towards the center axis of the PBP.

To realize three-dimensional (3D) optical interconnection on large-scale integration (LSI) circuits, layer-to-layer couplers based on Si-photonics platform were reviewed. In terms of optical cross talk, more than 1 µm layer distance is required for 3D interconnection. To meet this requirement for the layer-to-layer optical coupler, we proposed two types of couplers: a pair of grating couplers with metal mirrors for multi-layer distance coupling and taper-type directional couplers for neighboring layer distance coupling. Both structures produced a high coupling efficiency with relatively compact (∼100 µm) device sizes with a complementary metal oxide semiconductor (CMOS) compatible fabrication process.

This paper introduces a formation method for 3-dimensional 6 ch.×6 ch. shuffling structures with graded-index (GI) circular core in a multimode polymer optical waveguide for optical printed circuit boards (OPCBs) using a unique photomask-free fabrication technique named the Mosquito method. The interchannel pitch of the fabricated waveguides is 250µm, where all the channels consist of both horizontal and vertical bending structures and the last 6 channels in parallel cross over the first 6 channels. We also report 3-dimensional S-shaped polymer waveguides. In the S-shaped waveguides, the first and last 6 channels with both horizontal and vertical core bending composing the above 3-dimensional shuffling waveguide are separated, in order to evaluate the effect of over-crossing on the loss. It is experimentally confirmed that there is no excess insertion loss due to the shuffling structure in the 3-D shuffling waveguide. The evaluated crosstalk of the 3-D shuffling waveguide is lower than -30dB. The 3-D shuffling waveguide proposed in this paper will be a promising component to achieve high bandwidth density wiring for on-board optical interconnects.

A PLC based mode multi/demultiplexer based on asymmetric directional coupler has advantages in terms of compactness, mass productivity, low insertion loss, and matured reliability. However, it has relatively large wavelength dependence due to the difference of coupling length. To expand the bandwidth, we have designed two-mode (LP₀₁/LP_11a) multi/demultiplexer by wavefront matching method and demonstrated the broadband and low-loss characteristics. This paper reviews the device design by wavefront matching method and investigates the mechanism of its broadband characteristics.

Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect density, and the assumption is not necessarily valid. In 2016, we proposed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. In this study, we have applied the method to InGaN quantum-well active layers and have estimated the IQE values and their excitation carrier-density dependence in the layers.

The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (1122) GaN substrates are discussed. The structure is composed of (1122), {1101}, and {1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (1122) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.

We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metal-organic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.

Development of narrowband thermal emitters whose emission wavelengths are dynamically tunable is highly desired for various applications including the sensing of gases and chemical compounds. In this paper, we review our recent demonstration of wavelength-switchable mid-infrared thermal emitters based on multiple quantum wells (MQWs) and photonic crystals (PCs). Through the control of absorptivity by using intersubband transitions in MQWs and optical resonances in PC slabs, we demonstrate novel control of thermal emission, including realization of high-Q (Q>100) thermal emission, dynamic control of thermal emission (∼MHz), and electrical wavelength switching of thermal emission from a single device.

We discuss our recent progress in photonic crystal nanocavity quantum dot lasers. We show how enhanced light matter interactions in the nanocavity lead to diverse and fascinating lasing phenomena that are in general inaccessible by conventional bulky semiconductor lasers. First, we demonstrate thresholdless lasing, in which any clear kink in the output laser curve does not appear. This is a result of near unity coupling of spontaneous emission into the lasing cavity mode, enabled by the strong Purcell effect supported in the nanocavity. Then, we discuss self-frequency conversion nanolasers, in which both near infrared lasing oscillation and nonlinear optical frequency conversion to visible light are simultaneously supported in the individual nanocavity. Owing to the tight optical confinement both in time and space, a high normalized conversion efficiency over a few hundred %/W is demonstrated. We also show that the intracavity nonlinear frequency conversion can be utilized to measure the statistics of the intracavity photons. These novel phenomena will be useful for developing various nano-optoelectronic devices with advanced functionalities.

Frequency chirp of a semiconductor laser is controlled by using hybrid modulation, which simultaneously modulates intra-cavity loss and injection current to the laser. The positive adiabatic chirp of injection-current modulation is compensated with the negative adiabatic chirp created by intra-cavity-loss modulation, which enhances the chromatic-dispersion tolerance of the laser. A proof-of-concept transmission experiment confirmed that the hybrid modulation laser has a larger dispersion tolerance than conventional directly modulated lasers due to the negative frequency chirp originating from intra-cavity-loss modulation.

A lens-integrated surface-emitting DFB laser and its application to low-cost single-mode optical sub-assemblies (OSAs) are discussed. By using the LISEL, high-efficient optical coupling with reduced number of optical components and non-hermetic packaging are demonstrated. Designing the integrated lens of LISELs makes it possible to achieve passive alignment optical coupling to an SMF without the need for an additional lens. For SiP coupling, the light-emission angle from the LISEL can be controlled by the mirror angle and by displacing the lens. The capability for a low coupling loss of 3.9 dB between the LISEL and a grating coupler on the SiP platform was demonstrated. The LISEL with facet-free structure, integrating DBR mirror, PD, and window structure on its end facet, showed the same lasing performance as the conventional laser with AR facet coating. A storage test (200-hour saturated pressure-cooker test (PCT) at 138°C and 85% RH.) showed that the lasing characteristics did not degrade with high-humidity, demonstrating the potential for applying non-hermetic packaging. Our results indicate that the LISEL is one of the promising light sources for creating cost-effective OSAs.

Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm². The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.

We have proposed and developed new electro-optic modulators for the pre-equalization of signal distortion caused by the optical fiber chromatic dispersion effect. We found that the synthesis of an almost arbitrary impulse response function is obtainable by utilizing an electro-optic modulator composed of a Mach-Zehnder waveguide and travelling-wave electrodes on a ferro-electric material substrate with polarization-reversed structures. In this paper, the operational principle, design and simulation results of the pre-equalization modulator are presented. Some preliminary experimental results are also shown with future prospects.

Recent advances in phase-sensitive amplifiers (PSAs) using periodically poled LiNbO₃ are reviewed. Their principles of operation and distinct features are described. Applications in optical communication are studied in terms of the inline operation and amplification of a sophisticated modulation format. Challenges for the future are also discussed.

To meet the demand for continuous increase in data traffic, full usage of polarization freedom of light is becoming inevitable in the next-generation optical communication and datacenter networks. In particular, Stokes-vector modulation direct-detection (SVM-DD) formats are expected as potentially cost-effective method to transmit multi-level signals without using costly coherent transceivers in the short-reach links. For the SVM-DD formats to be practical, both the transmitter and receiver need to be substantially simpler, smaller, and lower-cost as compared to coherent counterparts. To this end, we have recently proposed and demonstrated novel SV modulator and receiver circuits realized on monolithic InP platforms. With compact non-interferometric configurations, relatively simple fabrication procedures, and compatibility with other active photonic components, the proposed devices should be attractive candidate in realizing low-cost monolithic transceivers for SVM formats. In this paper, we review our approaches as well as recent progresses and provide future prospects.

We review the recent advances on strain and temperature sensing techniques based on multimodal interference in perfluorinated (PF) graded-index (GI) polymer optical fibers (POFs). First, we investigate their fundamental characteristics at 1300nm. When the core diameter is 62.5µm, we obtain strain and temperature sensitivities of -112pm/µε and +49.8nm/°C, the absolute values of which are, by simple calculation, approximately 13 and over 1800 times as large as those in silica GI multimode fibers, respectively. These ultra-high strain and temperature sensitivities probably originate from the unique PF polymer used as core material. Subsequently, we show that the temperature sensitivity (absolute value) is significantly enhanced with increasing temperature toward ∼70°C, which is close to the glass-transition temperature of the core polymer. When the core diameter is 62.5µm, the sensitivity at 72°C at 1300nm is 202nm/°C, which is approximately 26 times the value obtained at room temperature and >7000 times the highest value previously reported using a silica multimode fiber. Then, we develop a single-end-access configuration of this strain and temperature sensing system, which enhances the degree of freedom in embedding the sensors into structures. The light Fresnel-reflected at the distal open end of the POF is exploited. The obtained strain and temperature sensitivities are shown to be comparable to those in two-end-access configurations. Finally, we discuss the future prospects and give concluding remarks.