IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Microwave and Millimeter-Wave Technologies
GaN Amplifiers of Selectable Output Power Function with Semi-Custom Matching Networks
Yutaro YAMAGUCHIMasatake HANGAIShintaro SHINJOTakaaki YOSHIOKANaoki KOSAKA
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2019 Volume E102.C Issue 10 Pages 682-690

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Abstract

A methodology for obtaining semi-custom high-power amplifiers (HPAs) is described. The semi-custom concept pertains to the notion that a selectable output power is attainable by replacing only transistors. To compensate for the mismatch loss, a new output matching network that can be easily tuned by wiring is proposed. Design equations were derived to determine the circuit parameters and specify the bandwidth limitations. To verify this methodology, a semi-custom HPA with GaN HEMTs was fabricated in the S-band. A selectable output power from 240 to 150 W was successfully achieved while maintaining a PAE of over 50% in a 19% relative bandwidth.

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© 2019 The Institute of Electronics, Information and Communication Engineers
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