MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition

Joong-Won SHIN; Masakazu TANUMA; Shun-ichiro OHMI

doi:10.1587/transele.2021FUP0003

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

MFSFET with 5nm Thick Ferroelectric Nondoped HfO₂ Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition

Joong-Won SHIN, Masakazu TANUMA, Shun-ichiro OHMI

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Keywords: ferroelectric, 5nm thick nondoped HfO₂, RF magnetron sputtering, Pt gate electrode, PMA process

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2022 Volume E105.C Issue 10 Pages 578-583

DOI https://doi.org/10.1587/transele.2021FUP0003

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Abstract

In this research, we investigated the metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5nm thick nondoped HfO₂ gate insulator by decreasing the sputtering power for Pt gate electrode deposition. The leakage current was effectively reduced to 2.6×10^-8A/cm² at the voltage of -1.5V by the sputtering power of 40W for Pt electrode deposition. Furthermore, the memory window (MW) of 0.53V and retention time over 10 years were realized.

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