MFSFET with 5 nm thick ferroelectric nondoped HfO₂ gate insulator utilizing low power sputtering for Pt gate electrode deposition

Abstract

In this research, we investigated the metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5 nm thick nondoped HfO₂ gate insulator by decreasing the sputtering power for Pt gate electrode deposition. The leakage current was effectively reduced to 2.6×10^-8 A/cm² at the voltage of -1.5 V by the sputtering power of 40 W for Pt electrode deposition. Furthermore, the memory window (MW) of 0.53 V and retention time over 10 years were realized.