Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Operating Characteristics of Gamma Irradiated Si BJT
2022 年 E105.C 巻 10 号 p. 631-634
詳細
2022 年 E105.C 巻 10 号 p. 631-634
When BJTs are irradiated by gamma rays, interface trapped charges and positive oxide trapped charges are formed by ionization at the Si-SiO2 interface and SiO2 regions, respectively. These trapped charges affect the movement of carriers depending on the type of BJT. This paper presents experimental results regarding operating characteristics of gamma irradiated pnp Si BJTs.
