Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code division multiple access), (3) Power mode switching methods for improving efficiency at low output power, (4) Power combining methods that have become important since LTE (long term evolution), and (5) Backoff efficiency improvement methods represented by ET (envelop tracking) and Doherty PA.

GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping effects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.

This paper presents a class-E power amplifier (PA) with a novel harmonic tuning circuit (HTC) based on composite right-/left-handed transmission lines (CRLH TLs). One of the issues of conventional harmonically tuned PAs is the limited PAE bandwidth. It is shown by simulation that class-E amplifiers have potential of maintaining high PAE over a wider frequency range than for example class-F amplifiers. To make full use of class-E amplifiers with the superior characteristics, an HTC using double CRLH TL stub structure is proposed. The HTC is not only compact but also enhances the inherently wide operation frequency range of class-E amplifier. A 2-GHz 6W GaN-HEMT class-E PA using the proposed HTC demonstrated a PAE bandwidth (≥65%) of 380MHz with maximum drain efficiency and PAE of 78.5% and 74.0%, respectively.

This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F^-1) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F^-1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.

A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.

A surrogate-based electromagnetic (EM) optimization using neural networks (NNs) is presented for computationally efficient microwave bandpass filter (BPF) design. This paper first describes the forward problem (EM analysis) and the inverse problems (EM design), and the two fundamental issues in BPF designs. The first issue is that the EM analysis is a time-consuming task, and the second one is that EM design highly depends on the structural optimization performed with the help of EM analysis. To accelerate the optimization design, two surrogate models of forward and inverse models are introduced here, which are built with the NNs. As a result, the inverse model can instantaneously guess initial structural parameters with high accuracy by simply inputting synthesized coupling-matrix elements into the NN. Then, the forward model in conjunction with optimization algorithm enables designers to rapidly find optimal structural parameters from the initial ones. The effectiveness of the surrogate-based EM optimization is verified through the structural designs of a typical fifth-order microstrip BPF with multiple couplings.

The expansion of the communication area is expected for Beyond-5G/6G networks using the High Altitude Platform Station (HAPS), Internet of Things (IoT), and sensor devices. Beyond-5G/6G networks constitute the vast amounts of devices that require the latest power utilization system. We expect Microwave Power Transfer (MPT) plays a role in the wireless power supply to HAPS, IoT, and sensors in this network. This work discusses the link design and techniques of MPT for the newest power utilization system required on Beyond-5G/6G networks.

In this paper, a high-efficiency high-power rectenna with a bridge diode and the diode on antenna (DoA) topology is discussed. First, the topologies of rectifiers and rectennas are discussed to indicate the direction for obtaining highly efficient rectification. Rectifiers with well-matched diode pairs, as double voltage and bridge rectifiers, can reactively terminate even order harmonics, and is suitable for highly efficient operation. A rectenna with the DoA topology is suitable for a direct connection between the highly functional antenna and the rectifier diodes to remove lossy circuit portions. Next, the formulas for the rectification efficiency of the bridge rectifier are demonstrated with the behavioral model. The indicated formulas clarify the fundamental limitation on the rectification efficiency, which is the design goal in case of the DoA topology. Finally, we demonstrate a 5.8 GHz band 1 W rectenna with the bridge diode and the DoA topology. The bridge rectifier that is directly connected to the inductive high-impedance antenna achieved a rectification efficiency of 92.8% at an input power of 1 W. This is close to the fundamental limitation due to the diode performance.

In this study, AM-PM compensation of the cross-coupled capacitance neutralization technique is discussed. C_gd neutralization leads to AM-PM compensation of a power amplifier with negligible change of AM-AM characteristics. AM-PM compensation was confirmed via circuit analysis and measurements. The formulation analysis showed that AM-PM compensation can be derived via gm variation against input power with capacitance neutralization. A differential power amplifier with capacitance neutralization was fabricated with GaN high-electron-mobility transistors. The AM-PM characteristic of the fabricated differential power amplifier was measured at 17.7 GHz. It showed AM-PM reduction of 22° at compared to a single-phase power amplifier without capacitance neutralization at output power of 35 dBm.

This paper proposes a new multi-port amplifier configuration that employs feed-forward techniques. In general, a multi-port amplifier is used as a transponder in a satellite transmitter. A multi-port amplifier comprises an N-in N-out input-side matrix network, N amplifiers, and an N-in N-out output-side matrix network. Based on this configuration, other undesired ports leak power to the desired port in a multi-port amplifier. If the power amplifier of a cellular base station uses a multi-port amplifier, the power leakage from the other ports causes degradation in the error vector magnitude. The proposed configuration employs N-parallel feed-forward amplifiers with a multi-port amplifier as the main amplifier. The proposed configuration drastically reduces the power leakage using the employed feed-forward techniques. An experimental 2-GHz band four-in four-out multi-port amplifier is constructed and tested. It achieves the leakage power level of -58 dB, a gain deviation of less than 0.05 dB, and a phase deviation of less than 0.45 deg. with the maximum power of 35 dBm over a 20-MHz bandwidth with the center frequency 2.14 GHz at room temperature. The experimental multi-port amplifier reduces the leakage power level by approximately 30 dB compared to that for a multi-port amplifier without the feed-forward techniques. The proposed configuration can be applied to power amplifiers in cellular base stations.

Drones have been attractive for many kinds of industries, but limited power supply from batteries has impeded drones from being operated for longer hours. Microwave power transmission (MPT) is one of the most prospective technologies to release them from the limitation. Since, among several types of drones, micro-drone has shorter available flight time, it is reasonable to provide micro-drone with wireless charging access with an MPT system. However, there is no suitable rectenna for micro-drone charging applications in preceding studies. In this paper, an MPT system for micro-drone was proposed at C-band where a lightweight and compact rectenna array with 20-W class output power was developed. Under illumination of a flat-top beam with 203 mW/cm² of power density, a 16-element rectenna array was measured. The 16-element rectenna was formed with the aid of a honeycomb substrate for lightness and GaAs Schottky barrier diodes for high output. It was 37.5 g in weight and 146.4 mm by 146.4 mm in size. It output 27.0 W of dc power at 19.0 V at 5.8 GHz when radio frequency power of 280 W was generated by the injection-locked magnetron and 134 W was transmitted from the transmitting phased array. The power-to-weight ratio was 0.72W/g. The power conversion efficiency was 61.9%. These numbers outperformed the rectennas in the preceding studies and are suitable for an MPT system to micro-drone.

There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The advancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D-integration of Fe-based metal composite magnetic core inductor, and GaN FET control designs.

LiDAR is a distance sensor that plays a key role in the realization of advanced driver assistance systems (ADAS). In this paper, we present a tutorial and review of automotive direct time of flight (dToF) LiDAR from the aspect of circuit systems. We discuss the breakthrough in ADAS LiDARs through comparison with the first-generation LiDAR systems, which were conventionally high-cost and had an immature performance. We define current high-performance and low-cost LiDARs as next-generation LiDAR systems, which have significantly improved the cost and performance by integrating the photodetector, the readout circuit, and the signal processing unit into a single SoC. This paper targets reader who is new to ADAS LiDARs and will cover the basic principles of LiDAR, also comparing with range methods other than dToF. In addition, we discuss the development of this area through the latest research examples such as the 2-chip approach, 2D SPAD array, and 3D integrated LiDARs.

This paper proposes a reference-clock-less quick-start-up CDR that resumes from a stand-by state only with a 4-bit preamble utilizing a phase generator with an embedded Time-to-Digital Converter (TDC). The phase generator detects 1-UI time interval by using its internal TDC and works as a self-tunable digitally-controlled delay line. Once the phase generator coarsely tunes the recovered clock period, then the residual time difference is finely tuned by a fine Digital-to-Time Converter (DTC). Since the tuning resolution of the fine DTC is matched by design with the time resolution of the TDC that is used as a phase detector, the fine tuning completes instantaneously. After the initial coarse and fine delay tuning, the feedback loop for frequency tracking is activated in order to improve Consecutive Identical Digits (CID) tolerance of the CDR. By applying the frequency tracking architecture, the proposed CDR achieves more than 100bits of CID tolerance. A prototype implemented in a 65nm bulk CMOS process operates at a 0.9-2.15Gbps continuous rate. It consumes 5.1-8.4mA in its active state and 42μA leakage current in its stand-by state from a 1.0V supply.

This paper presents a high-resolution and low-insertion-loss CMOS hybrid phase shifter with a nonuniform matching technique for satellite communication (SATCOM). The proposed hybrid phase shifter includes three 45° coarse phase-shifting stages and one 45° fine phase-tuning stage. The coarse stages are realized by bridged-T switch-type phase shifters (STPS) with 45° phase steps. The fine-tuning stage is based on a reflective-type phase shifter (RTPS) with two identical LC load tanks for phase tuning. A 0.8° phase resolution is realized by this work to support fine beam steering for the SATCOM. To further reduce the chain insertion loss, a nonuniform matching technique is utilized at the coarse stages. For the coarse and fine stages, the measured RMS gain errors at 29GHz are 0.7dB and 0.3dB, respectively. The measured RMS phase errors are 0.8° and 0.4°, respectively. The proposed hybrid phase shifter maintains return losses of all phase states less than -12dB from 24GHz to 34GHz. The presented hybrid phase shifter is fabricated in a standard 65-nm CMOS technology with a 0.14mm² active area.

A power-scalable wideband distributed amplifier is proposed. For reducing the power consumption of this power-hungry amplifier, it is efficient to lower the supply voltage. However, there is a hurdle owing to the transistor threshold voltage. In this work, a CMOS deeply depleted channel process is employed to overcome the hurdle.

This brief presents a slope analog-digital converter (ADC)-based supply voltage monitor (SVM) for biofuel-cell-powered supply-sensing systems operating in a supply voltage range of 0.18-0.35V. The proposed SVM is designed to utilize the output of energy harvester extracting power from biological reactions, realizing energy-autonomous sensor interfaces. A burst pulse generator uses a dynamic leakage suppression logic oscillator to generate a stable clock signal under the sub-threshold region for pulse counting. A slope-based voltage-to-time converter is employed to generate a pulse width proportional to the supply voltage with high linearity. The test chip of the proposed SVM is implemented in 180-nm CMOS technology with an active area of 0.018mm². It consumes 2.1nW at 0.3V and achieves a conversion time of 117-673ms at 0.18-0.35V with a nonlinearity error of -5.5/+8.3mV, achieving an energy-efficient biosensing frontend.

Graphene has been expected as an alternative material for copper interconnects in which resistance increases and reliability deteriorates in nanoscale. While the principle advantages are verified by simulations and experiments, they have not been put into practical use due to the immaturity of the manufacturing process leading to mass production. On the other hand, recent steady progress in the fabrication process has increased the possibility of practical application. In this paper, I will review the recent advances and the latest prospects for conductor applications of graphene centered on interconnects. The possibility of further application utilizing the unique characteristics of graphene is discussed.

In this research, we investigated the metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5nm thick nondoped HfO₂ gate insulator by decreasing the sputtering power for Pt gate electrode deposition. The leakage current was effectively reduced to 2.6×10^-8A/cm² at the voltage of -1.5V by the sputtering power of 40W for Pt electrode deposition. Furthermore, the memory window (MW) of 0.53V and retention time over 10 years were realized.

In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO₂ deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO₂ with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO₂. The MFSFET was fabricated with 10 nm-thick HfO₂ utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm²/(Vs) to 140 cm²/(Vs) by inserting Hf inter layer.

In this research, the effect of Ar/N₂-plasma sputtering gas pressure on the LaB_xN_y tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB₆ metal layer and LaB_xN_y insulator with α-rubrene passivation layer at annealing temperature of 200^°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10^-2 A/cm² to 1.1×10^-7 A/cm² and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10^-2 cm²/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.

The low temperature deposition of AlN at 160 °C is examined by using trimethyl aluminum (TMA) and NH radicals from plasma excited Ar diluted ammonia. For the deposition, a plasma tube separated from the reaction chamber is used to introduce the neutral NH radicals on the growing surface without the direct impacts of high-speed species and UV photons, which might be effective in suppressing the plasma damage to the sample surfaces. To maximize the NH radical generation, the NH₃ and Ar mixing ratio is optimized by plasma optical emission spectroscopy. To determine the saturated condition of TMA and NH radical irradiations, an in-situ surface observation of IR absorption spectroscopy (IRAS) with a multiple internal reflection geometry is utilized. The low temperature AlN deposition is performed with the TMA and NH radical exposures whose conditions are determined by the IRAS experiment. The spectroscopic ellipsometry indicates the all-round surface deposition in which the growth per cycles measured from front and backside surfaces of the Si sample are of the same range from 0.39∼0.41nm/cycle. It is confirmed that the deposited film contains impurities of C, O, N although we discuss the method to decrease them. X-ray diffraction suggests the AlN polycrystal deposition with crystal phases of AlN (100), (002) and (101). From the saturation curves of TMA adsorption and its nitridation, their chemical reactions are discussed in this paper. In the present paper, we discuss the possibility of the low temperature AlN deposition.

Low-temperature deposition of Y₂O₃ at 80^°C is studied using an yttrium precursor of tris(butylcyclopentadienyl)yttrium (Y(BuCp)₃) and plasma exited humidified argon oxidizer. The deposition is demonstrated using an atomic-layer-deposition sequence; the Y(BuCp)₃ and the oxidizing gases are time separately introduced to the reaction chamber and these injections are repeated. To determine the gas introduction conditions, surface reactions of Y(BuCp)₃ adsorption and its oxidization are observed by an in-situ IR absorption spectroscopy. The deposited film is confirmed as fully oxidized Y₂O₃ by X-ray photoelectron spectroscopy. The present deposition is applicable for the deposition of Y₂O₃ film on flexible polyethylene terephthalate films.

We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.

We fabricated Fe-silicide nanodots (NDs) on an ultrathin SiO₂ layer and evaluated changes in electron transport properties with and without magnetic field application. High-density NDs with an areal density as high as ∼10¹¹cm^-2 were formed on thermally grown SiO₂ by exposing ultrathin Fe/Si-NDs structures to a remote H₂ plasma without external heating. In electron transport properties related to current-time characteristics for a diode with Fe electrode and charging energy to NDs, clear changes in current levels through NDs and electron injection modulation of NDs depending on intensity of magnetic fields were observed.

S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.

A static timing analysis (STA) tool for a 28nm atom-switch FPGA (AS-FPGA) is introduced to validate the signal delay of an application circuit before implementation. High accuracy of the STA tool is confirmed by implementing a practical application circuit on the 28nm AS-FPGA. Moreover, dramatic improvement of delay and power is demonstrated in comparison with a previous 40nm AS-FPGA.

When BJTs are irradiated by gamma rays, interface trapped charges and positive oxide trapped charges are formed by ionization at the Si-SiO₂ interface and SiO₂ regions, respectively. These trapped charges affect the movement of carriers depending on the type of BJT. This paper presents experimental results regarding operating characteristics of gamma irradiated pnp Si BJTs.

We have investigated the electromotive force (EMF) of a composite sample consisting of a Π-type thermoelectric power generation structure with a pair of n- and p-type Si wafers and piezoelectric devices in order to collect electricity from vibration energy and thermal energy, simultaneously. The observed EMF was obtained by superimposing the oscillating EMF of vibration energy on the constant EMF of thermal energy. Therefore, we have improved the composite sample with diodes for rectifying the oscillating EMF. As a result, the full-wave rectification and the preservation of EMF amplitude were realized. From the frequency dependence, it was found that the dielectric loss of the piezoelectric device influences the amplitude and the time delay in the EMF.

To facilitate the reuse of environmental waste heat in our society, we have developed high-efficiency flexible thermoelectric power generators (TEPGs). In this study, we investigated the thermoelectromotive force (TEMF) and output power of a prototype device with 50 pairs of Π-type structures using a homemade measurement system for flexible TEPGs in order to evaluate their characteristics along the thickness direction. The prototype device consisted of C fabrics (CAFs) used as p-type materials, NiCu fabrics (NCFs) used as n-type materials, and Ag fabrics (AGFs) used as metal electrodes. Applying a temperature difference of 5K, we obtained a TEMF of 150μV and maximum output power of 6.4pW. The obtained TEMF was smaller than that expected from the Seebeck coefficients of each fabric, which is considered to be mainly because of the influence of contact thermal resistance at the semiconductor-fabric/AGF interfaces.