Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method

Abstract

The analysis of multiband quantum transport simulation in double-gate metal oxide semiconductor field effects transistors (DGMOSFETs) is performed based on a non-equilibrium Green's function (NEGF) formalism coupled self-consistently with the Poisson equation. The empirical sp³s* tight binding approximation (TBA) with nearest neighbor coupling is employed to obtain a realistic multiband structure. The effects of non-parabolic bandstructure as well as anisotropic features of Si are studied and analyzed. As a result, it is found that the multiband simulation results on potential and current profiles show significant differences, especially in higher applied bias, from those of conventional effective mass model.