Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films

Kiyoshi ISHII; Yoshifumi SAITOU; Kengo FURUTANI; Hiroshi SAKUMA; Yoshito IKEDA

doi:10.1093/ietele/e91-c.10.1653

Special Section on Functional Thin Films for Optical Applications

Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films

Kiyoshi ISHII, Yoshifumi SAITOU, Kengo FURUTANI, Hiroshi SAKUMA, Yoshito IKEDA

著者情報

キーワード: tin-doped indium oxide, transparent thin film, ITO, sputtered film, gas flow sputtering

ジャーナル認証あり

2008 年 E91.C 巻 10 号 p. 1653-1657

DOI https://doi.org/10.1093/ietele/e91-c.10.1653

詳細

抄録

Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 2×10^-2Ω·cm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.6×10^-4Ω·cm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50eV.

責任著者(Corresponding author)

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