High-efficiency pure-white organic light-emitting diodes (OLEDs) were fabricated using small polysilicic acid nanodot embedded polymeric hole-transporting layer. By incorporating the nanodot, the efficiency of a solution-processed phosphorescent white OLED was increased from 6.8 to 23.7lm/W, an improvement of 250%. 17.1lm/W was obtained while the same concept was applied on a mixed-host composed fluorescent white OLED.

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We propose to integrate a single lens on top of multiple OLEDs. Angular distribution of the light emitted from the lens surface is altered by turning on the OLEDs selectively. We can use such a light source as a backlight for a liquid crystal display to switch its viewing angle range and/or to display multiple images in different directions. Pixel-level integration would allow one to construct an OLED display with a similar emission angle control.

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Luminescent characteristics of BaGd₄Si₃O₁₃:Tb phosphor powder including fluorine, which is synthesized at about 1000°C, have been investigated. This phosphor shows the green emission due to Tb³⁺ under VUV excitation. By incorporation of F ion based on lowtemperature synthesis, the photoluminescence excitation band lying in the wavelength region from 130 to 170nm increases drastically in comparison to BaGd₄Si₃O₁₃:Tb phosphor synthesized at 1550°C. This phosphor is a candidate for a green PDP phosphor for both 147nm resonance line and 172nm excimer band of Xe plasma.

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The dependences of the structural, optical and electrical properties of highly transparent conductive Ga-doped ZnO (GZO) films on thickness have been studied. GZO films were prepared on unheated glass, polymethyl methacrylate (PMMA) and cyclo olefin polymer (COP) substrates by ion plating deposition with direct-current arc discharge. Polycrystalline GZO films with good adherence to a substrate having a (0002) preferred orientation have been obtained. Very little difference was found between the resistivity values of the GZO films on the glass substrate and those of the GZO films on the different polymer substrates, at any given film thickness. On both plastic substrates, the resistivity of the GZO films decreased from 2×10^-3 to 5×10^-4Ωcm with increasing film thickness.

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The properties of the surface-conduction electron-emitter display (SED) are mainly decided by the surface-conduction electron emitters (SCE), which are normally made from the expensive metal Pd. In this study, we propose to use metal Zn instead of Pd as the emitter material. Both the device electrode and ZnO thin film are deposited by a sputter, and the electron emitters (SCE) are formed by the electro-forming process. The electron emission characteristic is obtained and the luminescence is observed.

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Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.

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The polycrystalline silicon (poly-Si) TFT has two insulator interfaces between the polycrystalline silicon and front and back insulators. These interfaces have trap states, which affect the characteristics of poly-Si TFT. In the silicon-on-insulator (SOI) technology area, using the dual-gated, fully-depleted SOI MOSFET under the depleted back-channel condition, the back-interface trap density can be calculated through the front-channel threshold voltage and film thicknesses. The front-interface trap density is also evaluated changing the roles of both gates. This evaluation method for front- and back-interface trap densities is called the threshold-voltage method. To apply this threshold-voltage method to the “medium-thickness” poly-Si TFT, of which the channel is not fully depleted in normal single gate bias operation, the biases for both front and back gates are controlled to realize full depletion. Under the fully-depleted condition, the front- or back-threshold voltage of poly-Si TFT is carefully extracted by the second-derivative method changing back- and front-gate biases. We evaluated the front- and back-interface trap densities not only for normal operation but also under stress. To evaluate the bias and temperature stress effect, we used two types of samples, which are made by different processes. The evaluated front- and back-interface trap densities for both samples in initial state are around 5×10¹¹ to 1.3×10¹²cm^-2eV^-1, which are almost the same as the reported values. Applying bias and temperature stress shows the variation of these interface-trap densities. Samples with large shifts of the front-channel threshold voltage show large trap density variation. On the other hand, samples with small threshold voltage shifts show small trap density variation. The variation of the back-interface trap density during the stress application showed a correlation to the front-channel threshold voltage shift.

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Electrical characteristics of the mechanically flexible driver LSI as thin as 35μm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.

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We developed new principle of electronic paper that is one side (for 2D image) or double side (for stereoscopic 3D image) light printable rewritable matter with polarization dependent gray scale. It consists of one or two liquid crystal displays based on Optical Rewritable (ORW) technology, which is the development of rotation azo-dye photoalignment. Each ORW display uses bare plastic or polarizers as substrates. The conductor is not required, as the image is formed by rewritable states of azimuthal direction, which results in 2D pattern of the liquid crystal twist angle. Continuous grey image maintains proper performance even when the device is bent. Simple construction provides durability and low cost, thin substrates minimize parallax for 3D image. Fluorescent dye dopant of liquid crystal partly absorbs light in blue and re-emit in green specter range improving photopic reflection and enhancing color of the ORW e-paper.

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The authors have demonstrated the local alignment of nematic liquid crystal with local micro-grating structure fabricated by the curing of an ultraviolet curable material via a three dimensional micro-fabrication technique known as two photon excitation direct laser writing [1]. The molecular alignment of the nematic liquid crystals on the fabricated micro-grating structures was firstly investigated by the observations of a local twisted nematic region in a liquid crystal cell made of a substrate with locally fabricated micro-grating structure and a counter substrate with rubbed polyimide. The optical polarizing microscope observation of the micro-grating structures indicated that liquid crystals molecules have aligned parallel to the grooves of the micro-grating structure and that local alignment was successfully achieved. The alignment characteristics of the liquid crystals on these micro-gratings was also investigated and discussed quantitatively in details through the measurement of anchoring energy by the conventional torque balance method and the Berreman method. The azimuthal anchoring energy for the micro-grating was found to be in the order of 10^-6J/m² and inversely proportional to the grating period.kn-abstract=

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We report effects of washing rubbed polyimide film on the near surface. Especially we focused dependence of solvent. Rubbed polyimide films have been used as liquid crystal alignment films in Liquid crystal displays (LCDs), and in actual LCD panel fabrication washing on film surfaces after rubbing is essential process to remove dust and pollution. We investigated the effects of washing by grazing incidence X-ray diffraction (GIXD) measurements. In GIXD, the X-ray penetration into the polymer was changed from 8nm (suface sensitive) to 4nm (bulk sensitive) by variation of the X-ray incidence angle. It was found that crystallization near the surface induced by soaking was considerably dependent on solvent. However, in-plane distribution of the surface polymer chains of polyimide film was not found to be dependent on the solvents.

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Rubbed polyimide films have been widely used as liquid crystal alignment films for liquid crystal displays. Washing after rubbing is essential to fabricate liquid crystal displays, and should affect alignment of liquid crystal as well as rubbing. We investigated the effects of rubbing condition and soaking in acetone on polyimide films by grazing incidence X-ray diffraction. It was found that soaking in acetone promoted crystallization of surface aligned polymers, and that the crystallization by acetone was dependent on the initial polymer alignment. The larger initial crystalline phase was, the more newly crystallization occurred by soaking. It was also revealed that the crystallization by soaking in acetone was completed within 1min.

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Liquid crystal (LC) lenses that have hole-patterned electrodes and are driven by two voltages used as imaging devices are reported. Two different LC lenses are applied in image formation systems. One LC lens is used with a polarizer in a relay lens scope, and another LC lens that is polarization independent is used in a TV lens. Both LC lenses play roles of focusing elements in lens systems; objects are separately brought into focus by the LC lenses. Very sharp black-and-white and color images are formed by the systems.

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Gamma correction is an essential function and is time consuming task in every display device such as CRT and LCD. And gray scale CCT reproduction in most LCD are quite different from those of standard CRT. An automated fast and accurate display adjusment method and system for gamma correction and for constant gray scale CCT calibration of mobile phone LCD is presented in this paper. We develop the test pattern disply and register control program in mobile phone and devleop automatic measure program in computer using spectroradimeter. The proposed system is maintain given gamma values and CCT values accuratly. In addition, This system is possible to fast mobile phone LCD adjusment within one hour.

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An image sensor for a use of colorimeter is characterized based on the CIE standard colorimetric observer. We use the method of least squares to derive a colorimetric characterization matrix between RGB output signals and CIE XYZ tristimulus values. This paper proposes an adaptive measuring method to obtain the chromaticity of colored scenes and illumination through a 3×3 camera transfer matrix under a certain illuminant. Camera RGB outputs, sensor status values, and photoelectric characteristic are used to obtain the chromaticity. Experimental results show that the proposed method is valid in the measuring performance.

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Two-dimensional resonant optical scanners actuated by vertical electrostatic combs with a unique electrical isolation structure have been developed. The isolation on the movable frame surrounding 1mm-diameter gimbal mirror is made by trenching the top silicon layer of an SOI wafer with leaving the thick bottom layers. Thanks to the large mass of the frame, the resonant frequencies range in 65.0-89.2Hz for the frame and in 11.9-36.8kHz for the mirror in a 4mm×4mm chip. The resultant frequency ratio of the fast/slow axes reaches over 500 and such a high frequency ratio is utilized to display QVGA image by raster scanning of a laser beam.

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Liquid medium was investigated for creation of real 3D dynamic color images on a basis of laser breakdown effect experimentally. It was shown, that breakdown plasma flash in liquid can be used as a shining voxel of white color. Plasma flashing voxels were produced by means of YAG laser with repetition rate up to 2000Hz of nanosecond mJ pulses. Breakdown bubbles were found to be not hampering the displaying by flashes. Tens of liquids were tested concerning the lowest breakdown threshold. Up to now, tap water was found to be an optimal medium for displaying due to its low breakdown threshold, low attenuation of laser beam and safety. Seeing through electronic driven color filter made a burst of voxels to be perceived like colored one. TFT matrix from LCD was successfully used for the test coloring. A kind of hysteresis was also found out for dependence of laser breakdown probability on laser repetition rate for fixed laser beam in tap water.

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A new paradigm in the design of optical coatings connected with an outstanding computational efficiency of modern design techniques is discussed. Several other topics including pre-production error analysis, monitoring of coating production, and computational manufacturing of optical coatings are considered.

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Experimental and theoretical studies of light coupling to various magnetic nanostructured media and nanocomposites are briefly reported. Enhancement of the magneto-optical response is shown to occur when the constitutive materials of photonic crystals are magnetic. Transmission and reflection types of 1D magnetophotonic crystals (MPCs) have been studied. New possibility to enhance the magneto-optical response has been found when utilizing localized surface plasmon resonances in bismuth-substituted yttrium iron garnet (Bi:YIG) films impregnated with Au nanoparticles. Examples of integrated optic devices are discussed in which functional elements are 1D and 2D magnetophotonic crystals.

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Rugate thin film optical filters are useful for designing arbitrary-shaped spectra, such as multistep or triangular spectra. A technique for synthesizing the refractive index distribution of rugate filters was used to suppress unwanted ripples on the spectrum. The refractive index of an amorphous hydrogenated silicon oxide (a-SiO_x: H) rugate thin film was minutely controlled with a resolution of 0.001 using radio-frequency (RF) magnetron sputtering. The fabricated rugate filters had multistep bands over a wavelength range of 1260-1670nm or good linearity over 1290-1650nm.

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In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO₂ films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i. e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30sccm and oxygen gas of 4sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7m Torr and the films deposited at an incidence angle of more than 70° showed an elongated inclined columnar structure. Under this condition, a deposition rate of 30nm/min was realized even at an incidence angle above 70°, where most of the Si atoms incident to the substrate were supplied by the Si supply source and the oxygen radical source supplied oxygen radicals and promoted the oxidation of the film.

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Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H₂ to pure Ar sputtering gas were investigated. In the case of pure Ar at 2Pa, the resistivity is 7.45×10^-3Ωcm, whereas for Ar+1%H₂ at 0.3Pa, it markedly decreases to 2.52×10^-4Ωcm. In this case, the carrier density and Hall mobility are 1.12×10²¹cm^-3 and 23.4cm²/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H₂ and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.

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Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 2×10^-2Ω·cm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.6×10^-4Ω·cm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50eV.

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The damage to the organic layer of aluminum (III) bis(2-methy1-8-quninolinato)-4-phenylphenolate (BAlq) film was investigated on the basis of the change in photoluminescence (PL) intensity. To suppress the bombardment of the substrate with high-energy particles such as γ-electrons and negative oxygen ions, we used a facing-target sputtering (FTS) system. A marked reduction, however, of the PL intensity of the organic layer was still observed upon the deposition of an indium tin oxide (ITO) film on the organic film. To reduce this reduction, we proposed the insertion of a sector-shaped metal shield near the target electrode, and we showed its effectiveness in reducing the damage. This reduction of the damage is thought to be caused by the elimination of γ-electrons incident to the organic film surface escaping from the target area near the substrate side. We confirmed that high-energy electron bombardment leads to a significant reduction of PL intensity of the organic layer. This indicates that high-energy electrons incident to the organic film surface play a key role in the damage of the organic layer during the sputtering process.

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In this study, attenuated total reflection (ATR) utilizing surface plasmon (SP) excitation and SP emission lights were observed for the adsorption of polystyrene (PS) spheres and a water-soluble polymer. The PS spheres contained fluorescent dyes and exhibited red fluorescence. The ATR properties indicated film deposition with increasing number of adsorption cycles. The SP emission light induced by the fluorescent dye in the spheres was also measured, and an increase in the peak intensity, as well as an angle shift, was observed. Furthermore, the SP emission light spectra were investigated at various emission angles. The dispersion relation obtained from the SP emission light almost corresponded to that obtained from the ATR curves.

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We obtained blue photoluminescence from tantalum oxide films deposited by radio-frequency magnetron sputtering after annealing. The maximum peak intensity of the photoluminescence was observed from a sample annealed at 600°C for 20min, and the peak wavelength was approximately 430nm. Tantalum oxide films that emit blue light may be useful materials for novel active optical devices utilizing Ta₂O₅/SiO₂ multilayered photonic crystals.

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An indirectly reactive sputtering coater has been developed to deposit various high quality metallic and metal oxide films at high deposition rate. In this letter, several kinds of filters such as antirefiection (AR) coating, IR-cut filter, and Rugate filter were deposited for the benchmark test of implemental capabilities. Our coater was established to be a powerful tool for both discrete multilayer and Rugate filters due to high stability and reproducibility of the refractive index and the deposition rate.

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Optical anisotropy was induced in azobenzene copolymer film using linearly or elliptically polarized laser beams. The Jones matrix of the anisotropic film was calculated from the change in polarization of the probe light. Two eigenpolarization states were obtained from the matrix. These two eigenstates are useful as a polarization basis for a polarization-tunable component.

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A total-field/scattered-field (TF/SF) boundary which is commonly used in the finite-difference time-domain (FDTD) method to illuminate scatterers by plane waves, is developed for use in the constrained interpolation profile (CIP) method. By taking the numerical dispersion into account, the nearly perfect TF/SF boundary can be achieved, which allows us to calculate incident fields containing high frequency components without fictitious scattered fields. First of all, we formulate the TF/SF boundary in the CIP scheme. The numerical dispersion relation is then reviewed. Finally the numerical dispersion is implemented in the TF/SF boundary to estimate deformed incident fields. The performance of the nearly perfect TF/SF boundary is examined by measuring leaked fields in the SF region, and the proposed method drastically diminish the leakage compared with the simple TF/SF boundary.

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A strip line broadside hybrid coupler which is tolerant to manufacturing errors in a multi-layered LTCC substrate has been developed. The tolerance to a displacement error and a thickness variation in the multi-layered LTCC substrate can be achieved by using the tandem arrangement of diagonally shifted coupled lines with adjacent ground walls. It has been demonstrated that the coupling deviation from designed characteristics in our proposed hybrid coupler is very small.

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Crosstalk delay within an on-chip bus can induce severe transmission performance penalties. The Bus-grouping Asynchronous Transmission (BAT) scheme is proposed to mitigate the performance degradation. Furthermore, considering the distinct spatial locality of transition distribution on some types of buses, we use the locality to optimize the BAT. In terms of the implementation, we propose the Differential Counter Cluster (DCC) synchronous mechanism to synchronize the data transmission, and the Delay Active Shielding (DAS) to protect some critical signals from crosstalk and optimize the routing area overhead. The BAT is scalable with the variation of bus width with little extra implementation complexity. The effectiveness of the BAT is evaluated by focusing on the on-chip buses of a superscalar microprocessor simulator using the SPEC CPU2000 benchmarks. When applied to a 64-bit on-chip instruction bus, the BAT scheme, compared with the conservative approach, Codec and Variable Cycle Transmission (DYN) approaches, improves performance by 55⁺%, 10⁺%, 30⁺%, respectively, at the expense of 13% routing area overhead.

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A nonlinear piecewise scheme for non-uniformity correction in infrared focal plane arrays (IRFPA) is presented. In this method, utilizing the nonlinear piecewise scheme of detector response has extended the larger dynamic range of IRFPA response and the higher correcting accuracy than the non-uniformity correction algorithms based on linear response model of IRFPA detector. Based on the principle of this method, the mathematical model is established. At last experimental results are given out. The results show that it has higher correction precision, fewer calculations, and is easier to implement real-time non-uniformity correction of IRFPA by hardware circuit.

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We present the first demonstration of multiple-stage wavelength conversion using cascaded LiNbO₃ Mach-Zehnder SSB modulators. Wavelength is accurately shifted by 18GHz at each stage. 72GHz frequency shift with the relative intensity noise (RIN) value of -144.5dB/Hz is achieved by four stages. The achieved equivalent noise figure is 7.5dB.

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A new dual-band operation scheme is proposed for the Wilkinson power divider. The proposed structure has an open stub at the input and its two output ports are extended through a transmission line section. It offers improved bandwidth performance in the dual-band operation along with some structural advantages.

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A compact circuit model for five-port on-chip transformer balun is presented. Compared to the conventional model, the proposed model is simpler without any accuracy degradation and ensures faster convergence time, which in turn enables flexible RF circuit design optimization. The validity of the proposed model is confirmed through extensive EM simulations and measurements.

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Testing PLLs (phase-locked loops) is becoming an important issue that affects both time-to-market and production cost of electronic systems. Though a PLL is the most common mixed-signal building block, it is very difficult to test due to internal analog blocks and signals. In this paper, we propose a new PLL BIST (built-in self test) using the distorted frequency detector that uses only internal digital signals. The proposed BIST does not need to load any analog nodes of the PLL. Therefore, it provides an efficient defect-oriented structural test scheme, reduced area overhead, and improved test quality compared with previous approaches.

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