Abstract
We developed an Nb-based fabrication process for single flux quantum (SFQ) circuits in a Japanese government project that began in September 2002 and ended in March 2007. Our conventional process, called the Standard Process (SDP), was improved by overhauling all the process steps and routine process checks for all wafers. Wafer yield with the improved SDP dramatically increased from 50% to over 90%. We also developed a new fabrication process for SFQ circuits, called the Advanced Process (ADP). The specifications for ADP are nine planarized Nb layers, a minimum Josephson junction (JJ) size of 1×1μm, a line width of 0.8μm, a JJ critical current density of 10kA/cm2, a 2.4Ω Mo sheet resistance, and vertically stacked superconductive contact holes. We fabricated an eight-bit SFQ shift register, a one million SQUID array and a 16-kbit RAM by using the ADP. The shift register was operated up to 120GHz and no short or open circuits were detected in the one million SQUID array. We confirmed correct memory operations by the 16-kbit RAM and a 5.7 times greater integration level compared to that possible with the SDP.
