Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization

Norio SADACHIKA; Takahiro MURAKAMI; Hideki OKA; Ryou TANABE; Hans Juergen MATTAUSCH; Mitiko MIURA-MATTAUSCH

doi:10.1093/ietele/e91-c.8.1379

Regular Section

Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization

Norio SADACHIKA, Takahiro MURAKAMI, Hideki OKA, Ryou TANABE, Hans Juergen MATTAUSCH, Mitiko MIURA-MATTAUSCH

著者情報

キーワード: double gate MOSFET, HiSIM, circuit simulation, volume inversion

ジャーナル認証あり

2008 年 E91.C 巻 8 号 p. 1379-1381

DOI https://doi.org/10.1093/ietele/e91-c.8.1379

詳細

抄録

We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）