IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era
Simultaneous Switching Noise Analysis for High-Speed Interface
Narimasa TAKAHASHIKenji KAGAWAYutaka HONDAYo TAKAHASHI
著者情報
キーワード: SSN, power integrity, signal integrity, DDR
ジャーナル 認証あり

2009 年 E92.C 巻 4 号 p. 460-467

詳細
抄録
This paper describes the modeling and the analysis methodology to evaluate Simultaneous Switching Noise (SSN) for the combined system of the package with the 4-layer Printed Circuit Board (PCB), which the 64 Simultaneous Switching Outputs (SSOs) were included using a simple IBIS model. Simulation results showed that the ground plane in both package and PCB can be used as the reference to reduce SSN more effectively than the power plane. For the source synchronous timing technique such as used in a DDR SDRAM memory bus in the model shown in this paper, the skew control circuit tequiniqe is easy to apply in the chip design instead of using embedded capacitors in the package's substrate. And also the radiated emission and eye diagram analysis were studied.
著者関連情報
© 2009 The Institute of Electronics, Information and Communication Engineers
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