IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Masataka MIYAKE, Daisuke HORI, Norio SADACHIKA, Uwe FELDMANN, Mitiko MIURA-MATTAUSCH, Hans Jürgen MATTAUSCH, Takahiro IIZUKA, Kazuya MATSUZAWA, Yasuyuki SAHARA, Teruhiko HOSHIDA, Toshiro TSUKADA
著者情報
キーワード: carrier dynamics, low voltage, displacement current, continuity equation, carrier-transit delay, nonquasi-static effect, compact MOSFET model, driving capability, drift, diffusion, surface potential, circuit simulation
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2009 年 E92.C 巻 5 号 p. 608-615

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We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition.
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© 2009 The Institute of Electronics, Information and Communication Engineers
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