Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit

Abstract

In this paper, it is shown that our fabricated MTJ of 60×180nm², which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14µm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60×180nm² MTJ is less than 30ns with its programming current of 500µA and the resistance change of 1.2kΩ.