Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon

Chun-Hyung CHO; Ginkyu CHOI; Ho-Young CHA

doi:10.1587/transele.E93.C.640

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon

Chun-Hyung CHO, Ginkyu CHOI, Ho-Young CHA

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Keywords: VDP (van der Pauw) strain effects (111) silicon stress sensors piezo-resistive coefficients

JOURNAL RESTRICTED ACCESS

2010 Volume E93.C Issue 5 Pages 640-643

DOI https://doi.org/10.1587/transele.E93.C.640

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Abstract

We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.

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