Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
4H-SiC Avalanche Photodiodes for 280nm UV Detection
2010 Volume E93.C Issue 5 Pages 648-650
Details
2010 Volume E93.C Issue 5 Pages 648-650
We designed and fabricated 4H-SiC PIN avalanche photodiodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of > 80% at the wavelength of 280nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.
