IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
Naoaki TAKEBETakashi KOBAYASHIHiroyuki SUZUKIYasuyuki MIYAMOTOKazuhito FURUYA
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2011 年 E94.C 巻 5 号 p. 830-834

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In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO2 wires. The SiO2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at an emitter current density of 1.25MA/cm2 for a DHBT with an emitter width of 400nm. The DC characteristics of DHBTs with buried SiO2 wires were the same as those of DHBTs without buried SiO2 wires on the same substrate. A current gain cutoff frequency (fT) of 213GHz and a maximum oscillation frequency (fmax) of 100GHz were obtained at an emitter current density of 725kA/cm2.
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© 2011 The Institute of Electronics, Information and Communication Engineers
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