A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65nm CMOS

抄録

This paper proposes a low-phase-noise ring-VCO-based frequency multiplier with a new subharmonic direct injection locking technique that only uses a time-delay cell and four MOS transistors. Since the proposed technique behaves as an exclusive OR and can double the reference signal frequency, it increases phase correction points and achieves low phase noise characteristic across the wide output frequency range. The frequency multiplier was fabricated by using 65nm Si CMOS process. Measured 1-MHz-offset phase noise at 6.34GHz with reference signals of 528MHz was -119dBc/Hz.