IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
E95.C 巻, 10 号
選択された号の論文の20件中1~20を表示しています
Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies
Regular Section
  • Toshihiko ITO, Kenichi OKADA, Akira MATSUZAWA
    原稿種別: PAPER
    専門分野: Microwaves, Millimeter-Waves
    2012 年E95.C 巻10 号 p. 1666-1674
    発行日: 2012/10/01
    公開日: 2012/10/01
    ジャーナル 認証あり
    In this paper, a capacitive-cross-coupling common-gate (CCC-CG) LNA using capacitive feedback is proposed to improve the noise figure (NF). In the conventional CCC-CG LNA, the transconductance gm is determined by the input-matching condition while a lager gm is required to improve NF. gm of the proposed LNA can be increased and NF can be improved by using the added capacitive feedback. The analytical calculation shows that the proposed LNA can perform better than the conventional CCC-CG LNA. In the measurement results using a 0.18-µm CMOS technology, the gain is 10.4-13.4dB, NF is 2.7-2.9dB at 0.8-1.8GHz, and IIP3 is -7dBm at 0.8GHz. The power consumption is 6.5mW with a 1.8-V supply.
  • Shusuke YOSHIMOTO, Takuro AMASHITA, Shunsuke OKUMURA, Hiroshi KAWAGUCH ...
    原稿種別: PAPER
    専門分野: Electronic Circuits
    2012 年E95.C 巻10 号 p. 1675-1681
    発行日: 2012/10/01
    公開日: 2012/10/01
    ジャーナル 認証あり
    This paper presents a new 8T (8-transistor) SRAM cell layout mitigating multiple-bit upset (MBU) in a divided wordline structure. Because bitlines along unselected columns are not activated, the divided wordline structure eliminates a half-select problem and achieves low-power operation, which is often preferred for low-power/low-voltage applications. However, the conventional 8T SRAM with the divided wordline structure engenders MBUs because all bits in the same word are physically adjoining. Consequently, it is difficult to apply an error correction coding (ECC) technique to it. In this paper, we propose a new 8T cell layout pattern that separates internal latches in SRAM cells using both an n-well and a p-substrate. We saw that a SEU cross section of nMOS is 3.5-4.5 times higher than that of pMOS (SEU: single event upset; a cross section signifies a sensitive area to soft error effects). By using a soft-error simulator, iRoC TFIT, we confirmed that the proposed 8T cell has better neutron-induced MBU tolerance. The simulator includes soft-error measurement data in a commercial 65-nm process. The MBU in the proposed 8T SRAM is improved by 90.70% and the MBU soft error rate (SER) is decreased to 3.46 FIT at 0.9V when ECC is implemented (FIT: failure in time). Additionally, we conducted Synopsys 3-D TCAD simulation, which indicates that the linear energy transfer (LET) threshold in SEU is also improved by 66% in the proposed 8T SRAM by a common-mode effect.
  • Masataka MIYAKE, Junichi NAKASHIMA, Mitiko MIURA-MATTAUSCH
    原稿種別: PAPER
    専門分野: Semiconductor Materials and Devices
    2012 年E95.C 巻10 号 p. 1682-1688
    発行日: 2012/10/01
    公開日: 2012/10/01
    ジャーナル 認証あり
    Reverse-recovery modeling for p-i-n diodes in the high current-density conditions are discussed. With the dynamic carrier-distribution-based modeling approach, the reverse recovery behaviors are explained in the high current-density conditions, where the nonquasi-static (NQS) behavior of carriers in the drift region is considered. In addition, a specific feature under the high current-density condition is discussed. The proposed model is implemented into a commercial circuit simulator in the Verilog-A language and its reverse recovery modeling ability is verified with a two-dimensional (2D) device simulator, in comparison to the conventional lumped-charge modeling technique.
  • Hirohisa YOKOTA, Yusuke ITO, Hiroki KAWASHIRI, Hideyuki KIUE, Hideo TO ...
    原稿種別: BRIEF PAPER
    専門分野: Optoelectronics
    2012 年E95.C 巻10 号 p. 1689-1691
    発行日: 2012/10/01
    公開日: 2012/10/01
    ジャーナル 認証あり
    Polarization-maintaining photonic crystal fiber couplers (PM-PCFCs) were fabricated using a CO2 laser irradiation technique. We could control the states of air holes in the tapered region of couplers by adjusting the laser power density in the fusion and the elongation processes. It was demonstrated that the air hole remaining PM-PCFC exhibited polarization-splitting characteristics and that the air hole collapsed PM-PCFC had polarization insensitive coupling characteristics.
  • Zhenpeng BIAN, Ruohe YAO, Fei LUO
    原稿種別: BRIEF PAPER
    専門分野: Electronic Circuits
    2012 年E95.C 巻10 号 p. 1692-1694
    発行日: 2012/10/01
    公開日: 2012/10/01
    ジャーナル 認証あり
    An on-chip soft-start circuit based on a switched-capacitor for DC-DC switching regulator is presented. A ramp-voltage, which is generated by a switched-capacitor, is used to make pulse width slowly increase from zero, in order to eliminate the inrush current and the overshoot voltage during start-up. The post simulation results show that the regulator soft starts well with the proposed soft-start circuit.
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