IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
Takaaki KOGAToru MATSUURASébastien FANIELSatofumi SOUMAShunsuke MINESHIGEYoshiaki SEKINEHiroki SUGIYAMA
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ジャーナル 認証あり

2012 年 E95.C 巻 5 号 p. 770-776

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We recently determined the values of intrinsic spin-orbit (SO) parameters for In0.52Al0.48As/In0.53Ga0.47As(10nm)/In0.52Al0.48As (InGaAs/InAlAs) quantum wells (QW), lattice-matched to (001) InP, from the weak localization/antilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the subband energy spectra for the InGaAs/InAlAs double QW system from beatings in the Shubnikov de Haas (SdH) oscillations. The basic properties obtained here for the double QW system provides useful information for realizing nonmagnetic spin-filter devices based on the spin-orbit interaction [2].
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© 2012 The Institute of Electronics, Information and Communication Engineers
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