論文ID: 2020ECP5034
Nano crystalline zinc oxide (ZnO) is deposited by room temperature atomic layer deposition (RT-ALD) using dimethylzinc and a plasma excited humidified Ar without thermal treatments. The TEM observation indicated that the deposited ZnO films were crystallized with grain sizes of ∼20 nm on Si in the course of the RT-ALD process. The crystalline ZnO exhibited semiconducting characteristics in a thin film transistor, where the field-effect mobility was recorded at 1.29 × 10-3 cm2/ V⋅s. It is confirmed that the RT deposited ZnO film has an anticorrosion to hot water. The water vapor transmission rate of 8.4 × 10-3 g⋅m-2⋅day-1 was measured from a 20 nm thick ZnO capped 40 nm thick Al2O3 on a polyethylene naphthalate film. In this paper, we discuss the crystallization of ZnO in the RT ALD process and its applicability to flexible electronics.
