IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524

This article has now been updated. Please use the final version.

Electrical and X-ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN
Hiroshi OKADA, Mao FUKINAKA, Yoshiki AKIRA
Author information
Keywords: AlGaN/GaN heterostructure, ohmic contact, Ti/Al/Ti/Au, XPS
JOURNAL FREE ACCESS Advance online publication

Article ID: 2023FUS0002

The final version of this article is now available: Vol. E107.C (2024), No. 9 pp. 241-244
Details
Download PDF (636K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract

Effects of Al thickness in Ti/Al/Ti/Au ohmic contact on AlGaN/GaN heterostructures are studied. Samples having Al thickness of 30, 90 and 120 nm in Ti/Al/Ti/Au have been investigated by electrical and X-ray photoelectron spectroscopy (XPS) depth profile analysis. It is found that thick Al samples show lower resistance and formation of Al-based alloy under the oxidized Al layer.

Content from these authors
© 2024 The Institute of Electronics, Information and Communication Engineers
Favorites & Alerts

Recently viewed articles
Announcements from publisher
Share this page
feedback
 Top