Electrical and X-Ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN

Hiroshi OKADA; Mao FUKINAKA; Yoshiki AKIRA

doi:10.1587/transele.2023FUS0002

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Electrical and X-Ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN

Hiroshi OKADA, Mao FUKINAKA, Yoshiki AKIRA

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Keywords: AlGaN/GaN heterostructure, ohmic contact, Ti/Al/Ti/Au, XPS

JOURNAL FREE ACCESS

2024 Volume E107.C Issue 9 Pages 241-244

DOI https://doi.org/10.1587/transele.2023FUS0002

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Abstract

Effects of Al thickness in Ti/Al/Ti/Au ohmic contact on AlGaN/GaN heterostructures are studied. Samples having Al thickness of 30, 90 and 120 nm in Ti/Al/Ti/Au have been investigated by electrical and X-ray photoelectron spectroscopy (XPS) depth profile analysis. It is found that thick Al samples show lower resistance and formation of Al-based alloy under the oxidized Al layer.

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