Abstract
In this paper a third-order inter-modulation cancellation technique using Pre-Post-Distortion is proposed to design a wideband high linear low-power LNA in deep submicron. The IM3 cancellation is achieved by post-distorting signal inversely after it is pre- distorted in the input trans-conductance stage during amplification process. The operating frequency range of the LNA is 800MHz-5GHz. The proposed technique increases input-referred third-order intercept point (IIP3) and input 1dB Compression point (P-1dB) to 12-25dBm and -1.18dBm, respectively. Post layout simulation results show a noise figure (NF) of 4.1-4.5dB, gain of 13.7-13.9dB and S11 lower than -13dB while consumes 8mA from 1.2V supply. The LNA is designed in a 65nm standard CMOS technology. The layout schematic shows that the LNA occupies 0.15×0.11mm2 of silicon area.
