Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Special Issue : Frontier in Nanoscale Three-Dimensional Analysis
Issues of Three-Dimensional Nanometer Scale Analysis for Advanced Semiconductor Devices
Hiroki TANAKA
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Keywords: 3D, STEM, EELS, EDX, NBD
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2018 Volume 61 Issue 12 Pages 760-765

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Abstract

Semiconductor devices with complicated structures have been developed, and it is becoming increasingly important to understand three-dimensional (3D) structures of devices with nanometer resolution. The key to successful nanometer-scale 3D analysis is sample preparation technology and it has been highly developed. By combining or correlating multiple physical analyses, limitations of single analysis method are well covered and new information of 3D devices is obtained. Simultaneously acquired multi-signal STEM images are effective for internal structure analysis of 3D devices.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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