JSAP Annual Meetings Extended Abstracts

The 77th JSAP Autumn Meeting 2016

Displaying 151-200 of 3692 articles from this issue

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R&D of Nanobiodevices toward In-body Hospital

Takanori Ichiki

Session ID: 15p-B11-7
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_151

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Electronic Devices and Integrated Circuit Architecture towards Symbiosis with Biological Nerve Systems

Takashi Morie

Session ID: 15p-B11-8
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_152

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Measurement of Biological Functions Using Flexible Electronic Devices

Masaki Sekino, Dongmin Kim, Takao Someya

Session ID: 15p-B11-9
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_153

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”Living together, Electronic devices and Biology" When will the new symbiosis era arrive?

Ichiro Yamashita, Takeshi Fukuda, Ryugo Tero, Koichiro Miyamoto

Session ID: 15p-B11-10
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_154

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Opening remarks

Takashi Noguchi

Session ID: 14p-B7-1
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_155

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Perspective of LTPS-TFT Technology in Display Industry

Hiroyuki Ohshima

Session ID: 14p-B7-2
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_156

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Sputter-deposited SiO₂ Film and Laser-crystallized Si Film

Tadashi Serikawa

Session ID: 14p-B7-3
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_157

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Control of Crystal Growth and Defects in Group IV Semiconductor Thin Films by Atmospheric Pressure Thermal Plasma Jet

Higashi Seiichiro

Session ID: 14p-B7-4
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_158

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Crystallization of a-Si Films by Blue Multi-Laser Diode Annealing

Tatsuya Okada, Takashi Noguchi

Session ID: 14p-B7-5
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_159

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Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate

Tatsuki Hieda, Ryota Shin, Hiroaki Hanafusa, Seiichiro Higashi

Session ID: 14p-B7-6
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_160

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Growth kinetics and application of crystalline silicon thin film obtained by aluminum-induced layer exchange process

Noritaka Usami

Session ID: 14p-B7-7
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_161

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Metal-induced layer exchange growth of group-IV semiconductors

Ryota Yoshimine, Kaoru Toko, Takashi Suemasu

Session ID: 14p-B7-8
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_162

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Structural defects in IV semiconductors and their control

Ichiro Yonenaga

Session ID: 14p-B7-9
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_163

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Effects of defects in crystalline Ge substrates on FET performance

Akira Toriumi, Tomonori Nishimura

Session ID: 14p-B7-10
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_164

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Defects and Diffusion in IV Semiconductors

Masashi Uematsu

Session ID: 14p-B7-11
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_165

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Doping technique for IV-group semiconductor using interfacial nanostructures

Kazushi Miki, Koichi Murata, Christopher Kirkham, Bowler David

Session ID: 14p-B7-12
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_166

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Low-Temperature Solid-Phase Crystallization of a-Si, a-Ge Thin Films and Defect Formation During Its Process

Naoto Matsuo

Session ID: 14p-B7-13
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_167

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Location dependency of a-Ge film by Flash lamp annealing crystallization.

Naoki Yoshioka, Akira Heya, Naoto Matsuo, Yousuke Nakamura, Gakuhiko Y ...

Session ID: 14p-B7-14
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_168

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Introduction of Sn into GeSn based group-IV thin films and its impacts

Yosuke Shimura, Shinichi Ike, Federica Gencarelli, Wakana Takeuchi, Mi ...

Session ID: 14p-B7-15
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_169

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Formation of Sn Doped Ge (100) on Insulator by Aluminum Induced Crystallization

Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Session ID: 14p-B7-16
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_170

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Closing remarks

Taizoh Sadoh

Session ID: 14p-B7-17
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_171

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Low-Power Wireless Circuit Technology for the IoT Era

Hiroyuki Ito, Shiro Dosho, Noboru Ishihara, Kazuya Masu

Session ID: 14p-B1-1
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_172

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Device Technologies to Construct AI for IoT Big-Data Process

O'uchi Shin-ichi

Session ID: 14p-B1-2
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_173

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Engineering Proton Volatility in Oxides for Two-Terminal Neuromorphic Devices

Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Session ID: 14p-B1-3
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_174

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Technologies for IoT/IoE Devices

Katsura Miyashita, Eigo Shimada

Session ID: 14p-B1-4
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_175

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Template removal of low–k films in supercritical CO₂ fluid

Koki Segawa, Eiichi Kondoh, Mitsuhiro Watanabe, Mikhail R. Baklanov, L ...

Session ID: 14p-B1-5
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_176

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Channel Concentration and Work Function Dependences in Accumulation-Mode Stacked Nanowire CMOS Devices

Eisuke Anju, Takumi Ohashi, Iriya Muneta, Kakushima Kuniyuki, Tsutsui ...

Session ID: 14p-B1-6
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_177

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Current understanding of intrinsic point defects in semiconductor crystals

Ichiro Yonenaga

Session ID: 13p-B8-1
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_178

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Point Defect Control during Si Crystal Growth

Masataka Hourai

Session ID: 13p-B8-2
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_179

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Control of point defects in Si wafer by ultrahigh-temperature RTP technique

Koji Araki, Haruo Sudo, Tatsuhiko Aoki, Susumu Maeda

Session ID: 13p-B8-3
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_180

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Effect of Point Defect on Formation of Thermal Donor in Silicon Wafer

Kazuhisa Torigoe, Toshiaki Ono

Session ID: 13p-B8-4
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_181

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Density Functional Theory Study on Intrinsic Point Defects in Semiconductor Crystals

Koji Sueoka

Session ID: 13p-B8-5
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_182

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Defect reactions of hydrogen impurity with Cu₄ complex in silicon

Koun Shirai, Takayoshi Fujimura

Session ID: 13p-B8-6
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_183

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Characterization of point defects by means of positron annihilation - Si, nitrides, metals, and insulators -

Akira Uedono, Shoji Ishibashi

Session ID: 13p-B8-7
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_184

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Point Defects in SiC from a Perspective of Power Device Application

Tsunenobu Kimoto, Jun Suda

Session ID: 13p-B8-8
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_185

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DLTS and Photoluminescence Analysis of Intentionally B-doped 4H-SiC Epilayers

Anli Yang, Tetsuya Miyazawa, Takeshi Tawara, Hidekazu Tsuchida

Session ID: 13p-B8-9
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_186

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Measurement of the absolute quantum efficiency of radiation in high quality GaN single crystals (3)

Kazunobu Kojima, Tomomi Ohtomo, Makoto Saito, Hirotaka Ikeda, Kenji Fu ...

Session ID: 13p-B8-10
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_187

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Introduction

Hiroshi Amano, Kenji Shiraishi

Session ID: 14p-A21-1
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_188

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Prospects of GaN-based Electron Devices

Masaaki Kuzuhara

Session ID: 14p-A21-2
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_189

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Novel Developments in Bulk GaN Growth

Yusuke Mori, Masayuki Imanishi, Masashi Yoshimura, Mamoru Imade

Session ID: 14p-A21-3
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_190

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N-polar Growth of Nitride Semiconductors

Takashi Matsuoka

Session ID: 14p-A21-4
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_191

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Computer Modeling and Simulation of GaN Vapor Phase Epitaxy: An Ab Initio-Based Approach

Yoshihiro Kangawa, Kenji Shiraishi, Koichi Kakimoto

Session ID: 14p-A21-5
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_192

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Demonstration of a free-standing GaN crystal having a diameter of 7-inch with a tiling technique

Takehiro Yoshida, Masayuki Imanishi, Toshio Kitamura, Kenji Otaka, Mas ...

Session ID: 14p-A21-6
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_193

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STEM evaluation of atomic arrangements on dislocation core in GaN layer

Tohoru Matsubara, Kohei Sugimoto, Shin Goubara, Narihito Okada, Kazuyu ...

Session ID: 14p-A21-7
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_194

CONFERENCE PROCEEDINGS FREE ACCESS

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Interface control technologies for GaN transistors

Tamotsu Hashizume

Session ID: 14p-A21-8
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_195

CONFERENCE PROCEEDINGS FREE ACCESS

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Current Status and Issues of GaN Vertical Power Devices

Jun Suda

Session ID: 14p-A21-9
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_196

CONFERENCE PROCEEDINGS FREE ACCESS

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Current Status of GaN RF Devices

Naoki Hara, Kozo Makiyama

Session ID: 14p-A21-10
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_197

CONFERENCE PROCEEDINGS FREE ACCESS

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Development of large-scale optoelectronic integration circuits using GaN-based LED

Kazuaki Tsuchiyama, Shu Utsunomiya, Shota Nakagawa, Keisuke Yamane, Hi ...

Session ID: 14p-A21-11
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_198

CONFERENCE PROCEEDINGS FREE ACCESS

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An Overview of GaN-based P- and N-channel Power Integrated Circuit Technologies

Akira Nakajima, Sin-ichi Nishizawa, Hiromichi Ohashi, Kazuo Tsutsui, H ...

Session ID: 14p-A21-12
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_199

CONFERENCE PROCEEDINGS FREE ACCESS

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Current Status of GaN-based Optical Devices

Yasuhisa Ushida

Session ID: 14p-A21-13
Published: September 01, 2016
Released on J-STAGE: February 18, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2016.2.0_200

CONFERENCE PROCEEDINGS FREE ACCESS

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