Liquid phase deposition (LPD) is the method to deposit SiO
2 films on the substrates at room temperature in the super-saturated fluorosilicic acid (H
2SiF
6) solution. When the SiO
2 films are directly deposited on the Si substrates, which are treated with diluted HF to remove the native oxide, the characteristics of the the SiO
2/Si interface are poor, because the surface Si atoms are terminated and covered with H atoms. Low temperature (30—500°C) annealing in O
2 was found to be effective to improve the interface characteristics, and also the breakdown characteristics. This low temperature annealing in O
2 ambient is useful without losing the merit of low temperature process in the liquid-phase deposition method, when the deposited SiO
2 films are used as the gate insulators in Si MOS FETs.
抄録全体を表示