Growth rate and saturation temperature for the LPE growth of (GdSmTmCa)
3(FeGe)
5O
12 garnet films were investigated as a function of
R4 parameter, which is the molar ratio of garnet-forming oxides to total oxides in the melt. Below 800°C, very slow growth rate as low as 0.2 μm/min is obtained by using a melt whose
R4 parameter is 0.10. As the growth temperature decreases, film lattice parameter becomes larger because of the increase in Pb substitution. The Pb content increased up to 0.1 mole/garnet formula unit. Growth induced anisotropy constant
Kug is smaller at lower growth temperatures. Using low-temperature-growth LPE films, whose characteristics were adjusted for use in the drive layer for 4 μm contiguous disk (CD) device, good CD propagation margin was obtained.
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