The rise in temperature of the substrates in vacuum evaporation is a significant problem for the metallic coating of less heat-resistant materials. To reduce the temperature rise, evaporation is frequently conducted by use of shielding plates placed between the evaporation source and the substrates. This study has been made to determine the effect of the evaporation conditions on the rise in temperature of the substrates for the system having a shelter. The characteristics of the temperature rise for the shielded system are basically the same as those for the non-shielded system. Shielding has a marked effect on lowering the surface temperature for the substrate materials which otherwise are subjected to the rise in temperature. The temperature rise can be reduced, on average, to almost zero during evaporation. Prevention of the irradiation of the reflected heat radiation to the substrates, enabled by placing shielding plates, would be favorable for the measurements of the properties of evaporated films. It was also found that the temperature rise is influenced by the amount of absorption of reflected radiation as well as the evaporation energy value. The rise in temperature of the substrate materials for a definite thickness of evaporated films can be reduced with increasing deposition rate.

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It has been studied that evaporated InSb thin films obtained by controlling the substrate temperature have high electron mobility. The method of controlling the substrate temperature is explained as follows : the source material of InSb is started to be fed on the source heater at the time when the substrate temperature starts to increase and is evaporated during about 30-40 seconds while the substrate temperature increases gradually. After the preprogrammed period of temperature increases, the substrate temperature becomes to decrease, but in this period the source material is not fed. The above process is repeated several times until the InSb film grows up 1.0-1.2 μm on the substrate. The InSb film thus prepared has an electron mobility of 30, 000 cm²/V·sec on the cleaved mica sheet and 20, 000 cm²/V·sec on the glass substrate measured at room temperature.

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Thin magnetic films of Co-Ni were prepared by vacuum roll coating technologies with O₂ partial pressure using polyester film substrate. The total magnetic flux of these tapes was found to decrease on exposure to high humidity atmosphere. Investigation of sputtered coatings for metal thin film video tape have revealed thinner Si, Ti, Cr, Ni, Zr, Ta, NiO, Cr₂O₃, SiO₂, Si₃N₄, SiC, and TiC films to be an excellent barrier against high humidity corroding, and the protective effect of these sputtered coatings have a superiority compared with the same thickness films prepared by electron beam heated vapor deposition method.

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In vacuum deposition, the temperature rise of the coating substrates, due to the radiation energy from the evaporation source, is an important problem in case the deposition of metals is made on the materials poor in thermal resitivity. The temperature rise is influenced by the deposition rate, configuration of the evaporation source, and innner surface states of the bell jar. A shelter placed between the evaporation souce and substrates can prevent the temperature rise of the substrates to some extent. A metal plate placed very close to the evaporation source, on the other hand, can minimize the temperature rise due to the radiation energy to a greater extent; the evaporation characteristics is also improved. Optimum conditions for reducing the temperature rise, determined experimentally, are described, and the reason for the reduction in radiation heat is discussed in terms of geometrical view factor.

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Thermal deformation is frequently observed with less heat-resistant materials to be metal-deposited in vacuum evaporation. The heat produced is supposedly due to kinetic, condensation, and predominently radiation energies. This paper describes experiments made by using thermometer and SEM to characterize the radiation heat and to assess the ways to reduce it. The evaporation source installed in a glass bell jar (10l) is a conical basket (5mm in diameter) made of tungsten filament (0.8mm in diameter). The effects of a glass cylinder sealing the filament, an aluminum plate inserted between the evaporation source and the thermometer, and an iron plate placed 1mm beneath the filament have been examined on shielding radiation heat. It was found that the radiated heat in the bell jar did not obey the radiation law, especially when the vessel was contaminated with evaporated metals, and that the heat incident upon the materials emerged not only from the evaporator but inall the directions of 360°. The heat was 140% more with the cylinder-sealed evaporator than with the bare tungsten filament. The iron plate beneath the evaporator, on the other hand, reduced the radiation heat to the extent of less than 60%; the heat was radiated only from the evaporator. SEM observations also revealed that the iron plate was effective to reduce the heat radiated onto the less heatresistant materials which were otherwise subjected to heat deformation.

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The author studied the application of impulse current produced by instantaneous discharge of energy, which had been charged in a capacitor, to a tungsten filament in a vacuum. It was found by the author that the filament was explosively dispersed under specified conditions of electric circuit and discharge energy. The filament was dispersed into gaseous state by high discharge energy; or by concentrated energy resulting from reduced circuit inductance. For instance, the dispersion into gaseous state was obtained by the application of a current higher than 1 kamp through a filament of 0.2mm in dia. and 5mm in length; but the filament was dispersed into spheroidal balls under a current of lower than 1 kamp. A thin crystalline tungsten film was formed on a substrate placed near the filament, and the average thickness of the film violently decreased with an increase of energy. The film formed from the gaseous state was larger in thickness than that formed from the dispersed spheroidal state. The number of grains in these thin films depended on the discharge energy and circuit inductance. More grains were contained in the film by the discharge under lower energy or higher inductance; and grains were less in the film formed from the gaseous state that formed from the dispersed spheroidal state. In particular, very few grains were contained in the film formed from the gaseous state by the discharge of low circuit inductance.

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Vacuum-deposited films of some metals have been used for the resistors in mictocireuits. However, the resistance characteristics of very thin metal films are not always satisfactory for this purpose, because they are often unstable and have poor reproducibility. In this study, it was found that the chromium films which were evaporated on the thin silicon base layers deposited onto glass surfaces had more stable resistance characteristics than those usually deposited on glass substrates. The resistance of the formers, up to 100KΩ per square, was proved to be quite stable even when they were kept at 300°C in vacuum after deposition. The change of the resistance of these films being coated with further protective silicon monoxide films was less than 5 per cent in the range of film resistance from 1KΩ to 60KΩ per square as the results of the aging test at 200°C in air for 1500 hours. The resistivities of these films were lower than those of usual chromium films upto 300Å in thickness. Therefore, it may be supposed that the structures of the chromium films deposited on silicon base layers are compact even when they are as thin as about 10Å.

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真空テープを開発して, 磁気特性, 電磁変換特性, 実用特性等を測定した.このテープは, 短波長出力や記録, 再生効率が高く, 機器の小形・軽量化に寄与するものである. ここでは新テープの諸特性の紹介とカメラ一体形超小形VTRへの適用について考察した.

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Continuity of steered vacuum arc with Al cathode and N₂ flow under pressure of 0.1-5Pa is investigated. Two constant-current power supplies (60V open-circuit voltage/30V load voltage and 310V /240V) and a constant-voltage power supply with open-circuit voltage of 550V are used. Arc current is 30 A, N₂ flow rate is 20ml/min, and transverse magnetic field density at the cathode edge is 1.2mT. The following results are obtained. (1) When the power supply with lower open-circuit and load voltages is used, decrease in pressure causes the arc to lose sustainability. (2) When the power supply with high open-circuit and load voltages is used, the arc can continue even at lower pressure. (3) When the power supply with higher load voltage is used, abnormal discharge behind the magnet field guide-disk may occur at lower pressure.
The above mentioned influence of power supply on arc continuity is interpreted in terms of column fall and generation of a new cathode spot.

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ダイヤモンドコーティングされた鋼は，特に工具にとって優れた材料である。しかし，化学

は困難であるとされている。本研究では，化学を可能にするため，ステンレス鋼の表面に機械加工処理を施した。ステンレス鋼の表面を，サンドペーパーで研磨した場合，金属やすりで研磨した場合，フラットドリルで切削した場合では，稀にダイヤモンド膜が生成されたがほとんどの場合はアモルファスカーボンだった。これに対し，ステンレス鋼表面にドリルで規則的な窪みのパターンを作った場合，高頻度で高品質のダイヤモンドが得られた。この場合，ダイヤモンドは窪みの縁の部分，または窪みと窪みの間の平らな部分（加工されていない部分）に堆積した。本研究で得られたダイヤモンド膜の品質は，これまでに報告された「化学」の中で最高である。中間層なし，シーディングなしの条件で，「シンプルな機械加工のみで鋼表面へ高品質のダイヤモンドを直接可能である」ということは重要な発見である。

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近年真空技術の進歩と共に真空が盛んになり、製品が各方面に目覚ましく進出して居りますが、それ等製品の多くはバツチ方式でされたもので、ロール・コーテイング (連続方式による) の製品は一部に限られて居ります。しかしバツチ方式では不可能な
1.プラステイックシート又はフイルム
2.紙類
3.織物類
など長さの限定されない形状のものの真空が各自の利用目的から関心が高まつてきましたので当社で実験致しましたロール・コーテイングを主にしてお話いたします。

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A new ceramic coating technique is developed, in which focused cw CO₂ laser beam over 1 kW can be irradiated on the peripheral surface of a rotating ceramic ring in vacuum. Main results obtained from fundamental experiments are as follows : (1) Firm and homogeneous ceramic films can be formed in a vacuum about 1.3 × 10^-2 Pa. (2) The coated films have an amorphous structure and the compositions are often different from those of the mother materials. (3) Hardnesses of the films are not lower than those of the mother materials. Especially very hard BN film of Knoop hardness over 39.2 GPa can be formed by evaporating the soft sintered hBN with high deposition rate over 0.2 μm/min. (4) Ceramic coated Mo specimens show high wear-resistance in sliding experiments compared with the metal Mo itself.(5) Ceramic films coated on Mo substrates are effectively applicable to an absorbent plate against very high power CO₂ laser.

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This paper is concerned with the theoretical evaluation of residual stresses in multilayered structures fabricated on substrates, such as evaporated films and plating films.
Firstly, the analysis of thermal stresses in multilayered elastic thin films is carried out by using the method of strain suppression. Next, the theoretical formulas for evaluation of residual stresses arising in thin films and substrates are derived by the use of combining the results of the thermal stress analysis and those of stresses due to the inherent strains of the thin film. Furthermore the controlling parameters of residual stresses are derived theoretically.
Experimental results of residual stresses in evaporated Ag films and hard chrominum plating films agree approximately with theoretical ones.

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The method of estimating residual stresses in a film and a substrate has been proposed through use of the relationship between inherent strains and inherent stresses which is a kind of an inverse problem. The well-known method for determining the residual stress was the use of Stoney's equation estimating the average residual stress in the film from a deflection of the substrate. The proposed method focuses on the inherent strain generating the inherent stress such as a residual stress, then the strain is estimated from the relationship between the thickness of film and the deflection. The new method does not require the assumption of the constant stress in the film, and the stresses in the film and the substrate are simultaneously calculated from the inherent strain.

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In vacuum evaporation of metals, the temperature rise on the substrate surface due to the heat of evaporation is of importance, especially for the materials that are subject to low temperature thermal deformation and also frozen substrates. The present experiment concerns the reflection and absorption of radiation by the evaporated thin films, their influences on the surface temperature rise and differences in the temperature rise of the substrates due to the kinds of evaporated materials, evaporation rates etc. Characteristics of the heat of evaporation and basic conditions for reducing the temperature rise caused by the heat of evaporation are discussed. The results indicate that the absorption and reflection of radiation by the evaporated thin films, different from those by block materials, vary to a great extent with the film thicknesses. For the film thicknesses more than 700Å, inherent values depending on the kinds of evaporated materials were obtained; however, the absorption and refelction affect the temperature rise to a lesser extent. This would be interpreted that the temperature rise due to the kinetic and condensation energies are greater than those by radiation. The temperature rises on the substrates vary with the kinds of evaporated substances and evaporation rates; the rises are greater for C, Cr, and Si but lesser for Cu and Ge. For a constant thickness of an evaporated film, the temperature rise is reduced with greater deposition rate and shorter deposition time.

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Conventional ion-plated films are not of high purity, but show an excellent adhesion, so that these films have been used as coating films of mechanical parts such as gears, ball bearings, etc. The ion-plating technique has been investigated in order to apply it to telecommunication switches and semiconductors, which require that the ion-plated films are of high purity and of proper adhesion. Sputter cleaning and redeposition have been investigated by changing ion bonbardment conditions. Surface condition should be indicated by cathodic current density during sputter cleaning. It reduces for a time and reaches to a constant value. Then the sputter cleaning is completed. Redeposition of sputtered atoms from substrates and holders is measured by Auger electron spectroscopic analysis. Contamination caused by redeposition is reduced rapidly by lowering Ar gas pressure. Optimum condition for ion-plating is determined, that is, Ar gas pressure is 3.6×10^-3 Torr and applied voltage is-4kV. Ag (99.9%) is deposited on polished Cu substrates by ion-plating and vacuum evaporation. The properties of ion-plated films are measured and compared with those of vacuum evaporated ones. Ion-plated films have smaller grain size, less columnar grains, pin holes, defects, and larger internal stress than vacuum evaporated ones. Therefore, the mechanical properties on ion-plated films should be superior to those of vacuum evaporated ones.

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